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Your search keyword '"Miki Miyanaga"' showing total 2 results
Start Over Author "Miki Miyanaga" Journal journal of applied physics
2 results on '"Miki Miyanaga"'

1. Codoping of zinc and tungsten for practical high-performance amorphous indium-based oxide thin film transistors.

Author

Takio Kizu, Nobuhiko Mitoma, Miki Miyanaga, Hideaki Awata, Toshihide Nabatame, and Kazuhito Tsukagoshi

Subjects
ZINC oxide, TUNGSTEN, SEMICONDUCTOR doping, AMORPHOUS substances, INDIUM, THIN film transistors, DISSOCIATION (Chemistry), STRAINS & stresses (Mechanics)
Abstract

Using practical high-density sputtering targets, we investigated the effect of Zn and W codoping on the thermal stability of the amorphous film and the electrical characteristics in thin film transistors. zinc oxide is a potentially conductive component while W oxide is an oxygen vacancy suppressor in oxide films. The oxygen vacancy from In-O and Zn-O was suppressed by the W additive because of the high oxygen bond dissociation energy. With controlled codoping of W and Zn, we demonstrated a high mobility with a maximum mobility of 40 cm2/V s with good stability under a negative bias stress in InWZnO thin film transistors. [ABSTRACT FROM AUTHOR]

Published
2015
Full Text
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2. Codoping of zinc and tungsten for practical high-performance amorphous indium-based oxide thin film transistors

Author

Toshihide Nabatame, Takio Kizu, Nobuhiko Mitoma, Awata Hideaki, Miki Miyanaga, and Kazuhito Tsukagoshi

Subjects
Materials science, business.industry, Inorganic chemistry, Oxide, General Physics and Astronomy, chemistry.chemical_element, Tungsten, Sputter deposition, Amorphous solid, chemistry.chemical_compound, chemistry, Thin-film transistor, Sputtering, Optoelectronics, Thin film, business, Indium
Abstract

Using practical high-density sputtering targets, we investigated the effect of Zn and W codoping on the thermal stability of the amorphous film and the electrical characteristics in thin film transistors. zinc oxide is a potentially conductive component while W oxide is an oxygen vacancy suppressor in oxide films. The oxygen vacancy from In-O and Zn-O was suppressed by the W additive because of the high oxygen bond dissociation energy. With controlled codoping of W and Zn, we demonstrated a high mobility with a maximum mobility of 40 cm2/V s with good stability under a negative bias stress in InWZnO thin film transistors.

Published
2015
Full Text
View/download PDF

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