Search

The high interest in FeGa films is due to the high magnetostriction present in single crystal thin films. There is, however, significant reduction in the magnetostriction when grown using sputtering. The reduction is explained here using finite element analysis by considering the local magnetocrystalline and magnetoelastic behavior of the grains within the sample. It is shown that, if the saturation magnetostrictive constant for each grain in a polycrystalline structure is of the order of 400 ppm, this is reduced to less than 90 ppm when the crystallites are randomly orientated. Furthermore, the inherent stress due to the sample fabrication leads to an increase in the anisotropy field. This work suggests that, with low stress fabrication and aligning the in-plane orientation of the crystallites, the potential in unlocking FeGa as a thin film for sensory applications can be realised. [ABSTRACT FROM AUTHOR]

The in-plane anisotropies and magnetorestriction constants of Fe films grown on GaAs(200) and [Ga.sub.(0.8)][In.sub.(0.2)]As (100) substrates were compared to determine whether the lattice mismatch is an important factor. Results revealed that the lattice mismatch does not contribute to in-plane anisotropies of the Fe films.

This work focuses on the effect of film thickness on the microstructural and magnetic properties of polycrystalline Fe80Ga20 films of different thickness (20 nm⩽t⩽200 nm) fabricated on Si(100) substrates. From x-ray diffraction, a <110> texture was normal to the film plane in all films. For all film thicknesses, the lattice constant perpendicular to the film plane was less than the bulk, and first decreased and then increased toward the bulk value with increasing t. From atomic force microscopy data, both surface roughness and grain size were found to increase with film thickness. Using the Villari effect, the effective magnetostriction constant λeff was measured. Using the Szymczak model, it was found that λbulk=91±5 ppm, close to the bulk isotropic polycrystalline value (λiso=98 ppm). The surface magnetostriction λs contribution to λeff was found to be -1065±271 ppm nm. It was found that the 20 nm thick film had weak uniaxial anisotropy, while all the other films were magnetically isotropic. An extension of Néel's model to saturation field showed that the experimental data obeyed this model and the surface term affected the effective saturation field (Hs eff) significantly. [ABSTRACT FROM AUTHOR]

The structural, magnetic, and magnetostrictive properties of 75 nm Fe100-xGax films (0≤x≤30) have been studied to determine how a forming field during growth affects these properties. Two film sets were grown using a cosputtering-evaporation technique with and without a forming field of 65 kA m-1. Using x-ray diffraction, the texture, lattice parameter, and the grain size were determined. An out-of-plane <110> texture was found for all films. The magnetization loops were measured on a magneto-optic Kerr effect magnetometer, from which the anisotropy symmetry was inferred from the remanent magnetization. It was found that the forming field produced a pronounced uniaxial anisotropy. The effective magnetostriction constant was measured using the Villari effect. The effective magnetostriction constant was compared with that calculated for a polycrystalline film with <110> out-of-plane texture using bulk constants, and the results are discussed. [ABSTRACT FROM AUTHOR]

Results from studies of spin dependent transport in the hole transporting organic semiconductor regioregular poly 3-hexylthiophene (RR-P3HT) are reported. The organic spin valves were grown on glass, with the structure Fe50Co50/RR-P3HT/Ni81Fe19. RR-P3HT was cast from five different solvents with different boiling points; 1,2,4 trichlorobenzene, toluene, xylene, chloroform, and chlorobenzene. Magnetoresistance measurements were carried out at room temperature. Spin dependent transport was only observed when toluene, xylene, and annealed 1,2,4 trichlorobenzene were used as solvents. Results are interpreted on the basis of differences in the RR-P3HT morphology induced by different solvents under fixed processing conditions. [ABSTRACT FROM AUTHOR]

The magnetoresistance (MR) of organic spin valves containing the spacer layer regioregular poly(3-hexylthiophene) (RR-P3HT), which is a conjugated polymer, has been studied at room temperature. Investigations have been made of the influence of the thickness of organic spacer layer on the magnetoresistance of Fe50Co50/RR-P3HT/Ni81Fe19 spin valves. It was determined that the MR decreased as the layer thickness increased, consistent with the spin coherence length in this material. It has been observed at room temperature that there is the co-occurrence of two magnetoresistance effects, the spin-valve magnetoresistance, and anisotropic magnetoresistance in the magnetic electrodes. [ABSTRACT FROM AUTHOR]

Thin epitaxial Fe films grown on GaAs(100) and Ga0.8In0.2As(100) substrates were investigated to determine how tuning the lattice constant mismatch between the Fe and the substrate may change the in-plane anisotropies and the magnetostriction. Two sets of Fe films were grown using molecular-beam epitaxy, each capped with a Cr overlayer. For each film, the in-plane anisotropy constants were determined from the normalized magnetization loops measured using a magneto-optic Kerr effect magnetometer. The lattice mismatch was found to give no contribution to the in-plane anisotropies. For all the films the magnetostriction constants, determined by the Villari method, were negative and became more negative as the Fe thickness decreased. [ABSTRACT FROM AUTHOR]

In this article we present data which show that Cr overlayers on epitaxial Fe films on GaAs substrates change the magnetic properties of the films in comparison to Au overlayers. For films thinner than 50 ML, the presence of the Cr overlayer reduced the magnitude of the uniaxial anisotropy in the Fe film, while for a 150 ML film, there was still a strong uniaxial anisotropy present. The anisotropy constants were determined using a modified energy density model, and were found to be smaller than those for Au overlayer films. The absolute magnetizations were measured on a vibrating sample magnetometer. It was determined that for the same thickness of Fe the magnetization with a Cr overlayer was 75% of that for a Au overlayer. This was either due to the Cr alloying with the Fe at the interface, or the Cr forming CrO2 on the surface of the film. The magnetostriction constant was determined using the Villari effect. For all the films the saturation magnetostriction constant was more negative than the bulk Fe value. [ABSTRACT FROM AUTHOR]

We report an experimental and theoretical study of the influence of uniaxial strain on the magnetic properties of Fe/GaAs(100) ultrathin film systems. In-plane tensile strains have been applied along different directions relative to the intrinsic uniaxial magnetic anisotropy axes of the Fe/GaAs(100) films, and the M-H loops were measured. In an attempt to interpret the observed behavior, a phenomenological energy model is considered, which incorporates both intrinsic and strain-induced uniaxial anisotropy terms. Theoretical magnetization reversal loops were obtained from the model, assuming that the magnetoelastic coefficients of the thin films are same as the bulk bcc Fe. The model qualitatively predicted the magnetization loops for all the experimental data, assuming a positive uniaxial anisotropy constant. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]