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Compressive stresses in sputter deposited thin films are generally assumed to be caused by forward sputtered (peened) built-in particles and entrapped working gas atoms. While the former are assumed to be predominant, the effect of the latter on interaction dynamics and thin film properties is scarcely clarified (concurrent or causative). The overlay of the ion bombardment induced processes renders an isolation of their contribution impracticable. This issue is addressed by two molecular dynamics case studies considering the sputter deposition of Al thin films in Ar working gas. First, Ar atoms are fully retained. Second, they are artificially neglected, as implanted Ar atoms are assumed to outgas anyhow and not alter the ongoing dynamics significantly. Both case studies share common particle dose impinging Al(001) surfaces. Ion energies from 3 to 300 eV and Al / Ar + flux ratios from 0 to 1 are considered. The surface interactions are simulated by hybrid reactive molecular dynamics/force-biased Monte Carlo simulations and characterized in terms of mass density, Ar concentration, biaxial stress, shear stress, ring statistical connectivity profile, Ar gas porosity, Al vacancy density, and root-mean-squared roughness. Implanted Ar atoms are found to form subnanometer sized eventually outgassing clusters for ion energies exceeding 100 eV. They fundamentally govern a variety of surface processes (e.g., forward sputtering/peening) and surface properties (e.g., compressive stresses) in the considered operating regime. [ABSTRACT FROM AUTHOR]

A large number of simulation models have been proposed over the years to mimic the electrical behavior of memristive devices. The models are based either on sophisticated mathematical formulations that do not account for physical and chemical processes responsible for the actual switching dynamics or on multi-physical spatially resolved approaches that include the inherent stochastic behavior of real-world memristive devices but are computationally very expensive. In contrast to the available models, we present a computationally inexpensive and robust spatially 1D model for simulating interface-type memristive devices. The model efficiently incorporates the stochastic behavior observed in experiments and can be easily transferred to circuit simulation frameworks. The ion transport, responsible for the resistive switching behavior, is modeled using the kinetic cloud-in-a-cell scheme. The calculated current–voltage characteristics obtained using the proposed model show excellent agreement with the experimental findings. [ABSTRACT FROM AUTHOR]

External electric circuits attached to radio-frequency plasma discharges are essential for the power transfer into the discharge and are, therefore, a key element for plasma operation. Many plasma simulations, however, simplify or even neglect the external network. This is because a solution of the circuit's auxiliary differential equations following Kirchhoff's laws is required, which can become a tedious task especially for large circuits. This work proposes a method which allows one to include electric circuits in any desired radio-frequency plasma simulation. Conceptually, arbitrarily complex external networks may be incorporated in the form of a simple netlist. The suggested approach is based on the harmonic balance concept, which splits the whole system into the nonlinear plasma and the linear circuit contribution. A mathematical formulation of the influence of the applied voltage on the current for each specific harmonic is required and proposed. It is demonstrated that this method is applicable for both simple global plasma models and more complex spatially resolved Particle-in-Cell simulations. [ABSTRACT FROM AUTHOR]

The dispersion relation of plasma and plasma-dielectric photonic multilayer structures is approached in terms of a one-dimensional Particle-in-Cell simulation. For several plasma-dielectric configurations, the system response is obtained using a pulsed excitation and a subsequent two-dimensional frequency analysis. It is first shown that the dispersion relation of a single, homogeneous plasma slab is well described by the cold-plasma model even at a low pressure of 1 Pa. The study is extended to the simulation of plasma photonic crystals with a variety of configurations based on the work of Hojo and Mase [J. Plasma Fusion Res. 80, 89 (2004)]. Considering a one-dimensional plasma photonic crystal made from alternating layers of dielectric and homogeneous plasma slabs, it is shown that the assumption of a cold-plasma description is well justified also in this case. Moreover, in this work, the results are reformatted and analyzed in a band diagram representation, in particular, based on the lattice constant a. Based on these considerations, a scaling invariant representation is presented, utilizing a generalized set of parameters. The study is completed with an exemplary comparison of three plasma-dielectric photonic crystal configurations and their corresponding band diagrams. [ABSTRACT FROM AUTHOR]

Memristors based on a double barrier design have been analyzed by various nanospectroscopic methods to unveil details about their microstructure and conduction mechanism. The device consists of an AlOx tunnel barrier and a NbOy/Au Schottky barrier sandwiched between the Nb bottom electrode and the Au top electrode. As it was anticipated that the local chemical composition of the tunnel barrier, i.e., oxidation state of the metals as well as concentration and distribution of oxygen ions, has a major influence on electronic conduction, these factors were carefully analyzed. A combined approach was chosen in order to reliably investigate electronic states of Nb and O by electron energy-loss spectroscopy as well as map elements whose transition edges exhibit a different energy range by energy-dispersive X-ray spectroscopy like Au and Al. The results conclusively demonstrate significant oxidation of the bottom electrode as well as a small oxygen vacancy concentration in the Al oxide tunnel barrier. Possible scenarios to explain this unexpected additional oxide layer are discussed and kinetic Monte Carlo simulations were applied in order to identify its influence on conduction mechanisms in the device. In light of the deviations between observed and originally sought layout, this study highlights the robustness of the memristive function in terms of structural deviations of the double barrier memristor device. [ABSTRACT FROM AUTHOR]

Capacitively coupled radio frequency plasmas driven by customized voltage waveforms provide enhanced opportunities to control process-relevant energy distributions of different particle species. Here, we present an experimental investigation of the spatio-temporal electron heating dynamics probed by Phase-Resolved Optical Emission Spectroscopy (PROES) in an argon discharge driven by up to three consecutive harmonics of 13.56 MHz with individually adjustable harmonics' amplitudes and phases. PROES and voltage measurements are performed at fixed total voltage amplitudes as a function of the number of driving harmonics, their relative phases, and pressure to study the effects of changing the applied voltage waveform on the heating dynamics in collisionless and collisional regimes. Additionally, the ion energy distribution function (IEDF) is measured at low pressure. In this collisionless regime, the discharge is operated in the α-mode. The velocity of energetic electron beams generated by the expanding sheaths is found to be affected by the number of driving harmonics and their relative phases. This is understood based on the sheath dynamics obtained from a model that determines sheath voltage waveforms. The formation of the measured IEDFs is understood and found to be directly affected by the observed changes in the electron heating dynamics. It is demonstrated that the mean ion energy can be controlled by adjusting the harmonics' phases. In the collisional regime at higher pressures changing the number of harmonics and their phases at fixed voltage is found to induce heating mode transitions from the α- to the c-mode. Finally, a method to use PROES as a non-invasive diagnostic to monitor and detect changes of the ion flux to the electrodes is developed. [ABSTRACT FROM AUTHOR]

In this work, we report on kinetic Monte-Carlo calculations of resistive switching and the underlying growth dynamics of filaments in an electrochemical metallization device consisting of an Ag/TiO2/Pt sandwich-like thin film system. The developed model is not limited to (i) fast time scale dynamics and (ii) only one growth and dissolution cycle of metallic filaments. In particular, we present results from the simulation of consecutive cycles. We find that the numerical results are in excellent agreement with experimentally obtained data. Additionally we observe an unexpected filament growth mode that is in contradiction to the widely acknowledged picture of filament growth but consistent with recent experimental findings. [ABSTRACT FROM AUTHOR]

The transport of sputtered aluminum inside a multi frequency capacitively coupled plasma chamber is simulated by means of a kinetic test multi-particle approach. A novel consistent set of scattering parameters obtained for a modified variable hard sphere collision model is presented for both argon and aluminum. An angular dependent Thompson energy distribution is fitted to results from Monte Carlo simulations and used for the kinetic simulation of the transport of sputtered aluminum. For the proposed configuration, the transport of sputtered particles is characterized under typical process conditions at a gas pressure of p = 0.5 Pa. It is found that—due to the peculiar geometric conditions—the transport can be understood in a one dimensional picture, governed by the interaction of the imposed and backscattered particle fluxes. It is shown that the precise geometric features play an important role only in proximity to the electrode edges, where the effect of backscattering from the outside chamber volume becomes the governing mechanism. [ABSTRACT FROM AUTHOR]

This paper analyzes a situation which is common for magnetized technical plasmas such as dc magnetron discharges and high power impulse magnetron sputtering (HiPIMS) systems, where secondary electrons enter the plasma after being accelerated in the cathode fall and encounter a nearly uniform bulk. An analytic calculation of the distribution function of hot electrons is presented; these are described as an initially monoenergetic beam that slows down by Coulomb collisions with a Maxwellian distribution of bulk (cold) electrons, and by inelastic collisions with neutrals. Although this analytical solution is based on a steady-state assumption, a comparison of the characteristic time-scales suggests that it may be applicable to a variety of practical time-dependent discharges, and it may be used to introduce kinetic effects into models based on the hypothesis of Maxwellian electrons. The results are verified for parameters appropriate to HiPIMS discharges, by means of time-dependent and fully kinetic numerical calculations. [ABSTRACT FROM AUTHOR]