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The temperature dependence of the extraordinary Hall effect (EHE) in ultrathin films of the itinerant ferromagnet SrRu[O.sub.3] is dependence. The resistivity of the film has varied significantly with their thickness, whereas the EHE at low temperatures is determined solely by resistivity.

The changes in the resistivity anisotropy of epitaxial SrRu[O.sub.3] films due to induced magnetization in the paramagnetic state are explored by using the planar Hall effect. The studies have shown that the effect of the induced magnetization on the in-plane anisotropy is angular dependent, and have provided a full description of this behavior at 160 K for induced magnetization in the (001) plane.

The destabilization of a fully magnetized state by pulses of spin polarized current is studied. The studies have shown a qualitative difference between destabilizing current and the current required for depinning domain walls in the same region and has suggested that the destabilizing current is related to current-induced nucleation.

The paramagnetic anisotropic magnetoresistance in thin films of SrRuO3 is discussed. Significant anisotropic magnetoresistance (AMR) is present in the paramagnetic state with relatively small M and a large effect of the orientation of M and J relative to the crystals axis.

SrRuO3 is an itinerant ferromagnet with orthorhombic structure and uniaxial magnetocrystalline anisotropy—features expected to yield resistivity anisotropy. Here we explore changes in the resistivity anisotropy of epitaxial SrRuO3 films due to induced magnetization in the paramagnetic state by using the planar Hall effect. We find that the effect of the induced magnetization on the in-plane anisotropy is strongly angular dependent, and we provide a full description of this behavior at 160 K for induced magnetization in the (001) plane. [ABSTRACT FROM AUTHOR]

Current pulses injected into a fully magnetized region of the itinerant ferromagnet SrRuO3 destabilize the uniform state and induce the formation of a domain structure when the current density exceeds a certain threshold. We study the temperature and field dependence of the destabilizing current (Ids) and compare the results with the temperature and field dependence exhibited by the current required for depinning domain walls in the same region (Idp). We find a qualitative difference between Ids and Idp and suggest that Ids may be related to current-induced nucleation. [ABSTRACT FROM AUTHOR]

Current pulses injected into a fully magnetized region of the itinerant ferromagnet SrRuO3 destabilize the uniform state and induce the formation of a domain structure when the current density exceeds a certain threshold. We study the temperature and field dependence of the destabilizing current (Ids) and compare the results with the temperature and field dependence exhibited by the current required for depinning domain walls in the same region (Idp). We find a qualitative difference between Ids and Idp and suggest that Ids may be related to current-induced nucleation. [ABSTRACT FROM AUTHOR]

SrRuO3 is an itinerant ferromagnet and in its thin film form when grown on miscut SrTiO3 has Tc of ∼150 K and strong uniaxial anisotropy. We measured both the Hall effect and the magnetoresistance (MR) of the films as a function of the angle between the field applied and the normal to the films above Tc. We extracted the extraordinary Hall effect that is proportional to the perpendicular component of the magnetization and thus the MR for each angle of field applied could be correlated with the magnitude and orientation of the magnetization induced. We fit the MR data with a second order magnetization expansion, and it indicated large anisotropic MR in the paramagnetic state. The extremum values of resistivity were not obtained for currents parallel or perpendicular to the magnetization, probably due to crystal symmetry. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

We have measured the temperature dependence of the extraordinary Hall effect (EHE) in ultrathin films of the itinerant ferromagnet SrRuO3. We find that while the resistivity ρ of the films varies significantly with their thickness, the EHE at low temperatures appears to be determined solely by ρ. We discuss possible implications of this observation. [ABSTRACT FROM AUTHOR]

SrRuO3 is an itinerant ferromagnet and in its thin film form when grown on miscut SrTiO3 has Tc of ∼150 K and strong uniaxial anisotropy. We measured both the Hall effect and the magnetoresistance (MR) of the films as a function of the angle between the field applied and the normal to the films above Tc. We extracted the extraordinary Hall effect that is proportional to the perpendicular component of the magnetization and thus the MR for each angle of field applied could be correlated with the magnitude and orientation of the magnetization induced. We fit the MR data with a second order magnetization expansion, and it indicated large anisotropic MR in the paramagnetic state. The extremum values of resistivity were not obtained for currents parallel or perpendicular to the magnetization, probably due to crystal symmetry. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]