Search

Gallium doped zinc oxide was ablated using the third harmonics of Nd:YAG laser at various laser fluences and nitrous oxide ambient gas pressures. Optical emission spectroscopic technique was used to determine the plasma parameters. Spatial variation of electron number density (Ne) was determined along the direction normal to the target surface. The electron density obtained was of the order of 1017 cm-3, for the laser fluence in the range of 1.27–6.35 J cm-2. The influence of the substrate temperature on the plasma plume was studied by keeping an Al2O3 (alumina) substrate at a distance of 5 cm distance from the target at various temperatures. The increase in the substrate temperature enhanced the electron number density and intensity of spectral emissions of various species in the plume. The time of flight transients of specific emissions from the plume were recorded. The velocity of neutral gallium decreased from 6.45 to 3.87 km/s at 4 mm distance from the target when the ambient gas pressure was increased from 0.0001 to 0.1 mbar. The velocities of the species increased considerably with an increase in laser fluences. ZnO thin films were deposited on alumina substrates. The plasma plume kinematics were used to corroborate the nature of thin film deposition. [ABSTRACT FROM AUTHOR]

Optical emission spectroscopic studies were carried out on the plasma produced by ablation of zinc oxide target using the third harmonic (355 nm) of Q-switched Nd:YAG laser, in vacuum and at three different ambient gas (oxygen) pressures. The spatial variations of electron density (Ne) and electron temperature (Te) were studied up to a distance of 20 mm from the target surface. The kinematics of the emitted particles and the expansion of the plume edge are discussed. The optimum conditions favorable for the formation of high quality zinc oxide thin films are thereby suggested. [ABSTRACT FROM AUTHOR]

The radio frequency plasma generated during the sputtering of Indium Tin Oxide target using Argon was analyzed by Langmuir probe and optical-emission spectroscopy. The basic plasma parameters such as electron temperature and ion density were evaluated. These studies were carried out by varying the RF power from 20 to 50 W. A linear increase in ion density and an exponential decrease in electron temperature with rf power were observed. The measured plasma parameters were then correlated with the properties of ITO thin films deposited under similar plasma conditions. [ABSTRACT FROM AUTHOR]