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The study of photoluminesence (PL) near 4450 angstroms (violet) and 5900 angstroms (yellow), from ZnSe/Zn(sub i-x)Mn(sub x)Se strained-layer super lattices, as a function of applied hydrostatic pressure shows that the intensities of the violet and yellow PL decrease above a certain pressure. This decrease in intensity suggests the occurrence of a phase transition in the Zn(sub x)Mn(sub 1-x)Se layers or band crossing.

Tunnel field-effect transistors (TFETs) with a subthreshold swing (SS)<60 mV/dec are expected to be active devices in low-power flexible systems, potentially lowering operational voltage by virtue of steep switching behavior via band-to-band tunneling. In silicon (Si) channel materials, however, it still remains a challenge to obtain SS smaller than 60 mV/dec. In this study, we experimentally demonstrate the sub-60 mV/dec operation of a flexible semi-around gate TFET on a plastic substrate using Si nanowires (SiNWs) as the channel material. With the combined advantages of selectively thinned SiNW channels (width ~15 nm and height ~40 nm) and high-κ (Al2O3 ~7 nm) gate dielectric, in conjunction with an abrupt degenerate source junction, the device with a channel length of ~500 nm exhibits a minimal SS of ~42 mV/dec at room temperature. Moreover, mechanical bendability of the device indicates that it has stable and good fatigue properties, providing an important step towards the realization of steep-slope switches for low-power and energy-efficient flexible electronics. [ABSTRACT FROM AUTHOR]

The various photoresponsive current-voltage characteristics of the organic thin film transistors (OTFTs) are analyzed. An increase in the incident light power is shown to lead to a significant reduction in the photosensitivity of the devices.