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Hybrid systems based on carbon nanotubes emitting in the telecom wavelength range and Si-photonic platforms are promising candidates for developing integrated photonic circuits. Here, we consider semiconducting single walled carbon nanotubes (s-SWNTs) emitting around 1300 nm or 1550 nm wavelength. The nanotubes are deposited on quartz substrate for mapping their photoluminescence in hyperspectral near-field microscopy. This method allows for a sub-wavelength resolution in detecting the spatial distribution of the emission of single s-SWNTs at room temperature. Optical signature delocalized over several micrometers is observed, thus denoting the high quality of the produced carbon nanotubes on a wide range of tube diameters. Noteworthy, the presence of both nanotube bundles and distinct s-SWNT chiralities is uncovered. [ABSTRACT FROM AUTHOR]

We show that the epitaxial growth of height-controlled GaAs quantum dots, leading to the reduction of the inhomogeneous emission bandwidth, produces individual nanostructures of peculiar morphology. Besides the height controlled quantum dots, we observe nanodisks formation. Exploiting time resolved and spatially resolved photoluminescence we establish the decoupling between quantum dots and nanodisks and demonstrate the high optical properties of the individual quantum dots, despite the processing steps needed for height control. [ABSTRACT FROM AUTHOR]

The multiexciton properties of extrinsic centers from AlGaAs layers on Ge and Si substrates are addressed. The two photon cascade is found both in steady state and in time resolved experiments. Polarization analysis of the photoluminescence provides clearcut attribution to neutral biexciton complexes. Our findings demonstrate the prospect of exploiting extrinsic centers for generating entangled photon pairs on a Si based device. [ABSTRACT FROM AUTHOR]