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The experiments demonstrate that the p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated on silicon-on-insulator (SOI) substrates exhibit a lower magnitude of the 1/f noise, which is studied as a function of the back gate voltage. The results show that the 1/f noise is highly affected by the channel positioning of silicon and increases with an increase in the back gate voltage that push the carriers towards the front gate oxide interface.

The impact of an accumulation back-gate voltage on the linear kink effect (LKE) Lorentzians in thin-gate partially depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors (PD MOSFETs) is investigated. It is demonstrated that the front-back coupling effects can be explained by considering the increased body-source leakage currents.

The formation of surface blisters in (100) n-type silicon following co-implantation with hydrogen and boron was investigated. The objective of the study was to explore the influence of boron on the coalescence of hydrogen, formation of bubbles and surface blistering. Results indicate that the electrical state of the implanted boron plays a critical role in the hydrogen blister formation.

Five-nanometer thick silicon on insulator (SOI) is achieved by using epitaxially grown Si/Y2O3/Si structure. Pulsed laser deposition technique allows the independent thickness control of both silicon and the oxide in the nanometer range, but Si/CeO2/Si SOI structure was not as successful due to the formation of an amorphous oxide film at the interfaces.

A photonic crystal microcavity is designed to obtain an original field distribution inside the cavity and the structure is etched inside a silicon-on-insulator waveguide. While the results obtained with the two techniques are in very good agreement, the near-field distribution above the device is mapped and light confinement inside the cavity is evidenced.