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A theoretical approach was used to investigate the effects of strain on normal incidence hole intersubband absorption in a p-type semiconductor quantum well. The results showed that the most dominant transition probability and absorption coefficient under normal incident light originated from the first heavy hole subband to the primary light hole subband. Changing the strain allowed the absorption coefficient peak to be induced to occur at a given wavelength.

Strained AlGaInP/GaInP multiple-quantum-well laser structures have been grown by metalorganic chemical vapor deposition using teriarybutylphosphine as the phosphorus precursor and ridge waveguide lasers of 4 μm wide have been fabricated. Room temperature continuous-wave lasing has been obtained with an emission wavelength of about 670 nm. A single-facet output power of more than 18 mW has been achieved for an as-cleaved laser chip. It can be concluded that it is feasible to fabricate AlGaInP red lasers using less toxic metalorganic source tertiarybutylphosphine in parallel with conventionally used highly toxic PH3. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]