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An analytical two-dimensional (2D) model for the subthreshold swing of the short-channel double-gate (DG) MOSFET with a vertical Gaussian-like doping profile is presented in this paper. The 2D potential function obtained by solving the 2D Poisson's equation by using the evanescent mode analysis has been used to formulate the subthreshold current. The concept of the effective conduction path effect of uniformly doped DG MOSFETs has been extended to the nonuniformly doped DG MOSFETs to obtain the subthreshold swing variations against doping profile parameters as well as device parameters of the present device. The results of the model show excellent matching with the numerical simulation data obtained by using the commercially available ATLASTM, a two-dimensional device simulator from SILVACO. [ABSTRACT FROM AUTHOR]

A two-dimensional (2D) analytical model for the threshold voltage of fully depleted short-channel triple-material double-gate (DG) metal-oxide-semiconductor field-effect transistors (MOSFETs) is presented in this paper. The 2D Poisson's equation has been solved with suitable boundary conditions by applying the parabolic potential approximation. The lightly doped channel has been taken to enhance the device performance in terms of higher carrier mobility and minimum dopant fluctuation. The improved hot carrier effects over the double-material DG MOSFETs have been demonstrated. Different length ratios of three channel regions related to different gate materials have been optimized to minimize short-channel effects. The effects of device parameters on the threshold voltage have also been discussed. The model results have been compared with the simulation data obtained by using the commercially available device simulation software ATLAS™. [ABSTRACT FROM AUTHOR]

A two-dimensional (2D) model for the threshold voltage of the short-channel double-gate (DG) metal-oxide-semiconductor field-effect transistors (MOSFETs) with a vertical Gaussian-like doping profile is proposed in this paper. The evanescent mode analysis has been used to solve the 2D Poisson’s equation to obtain the channel potential function of the device. The minimum surface potential has been used to model the threshold voltage of the DG MOSFETs. Threshold voltage variations against channel length for different device parameters have been demonstrated. The validity of the proposed model is shown by comparing the results with the numerical simulation data obtained by using the commercially available ATLAS™, a 2D device simulator from SILVACO. [ABSTRACT FROM AUTHOR]