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We demonstrate an efficient possibility to synthesize vertically aligned pure zinc oxide (ZnO) and Co-doped ZnO nanorods (NRs) using the low-temperature aqueous chemical synthesis (90°C). Two different mixing methods of the synthesis solutions were investigated for the Co-doped samples. The synthesized samples were compared to pure ZnO NRs regarding the Co incorporation and crystal quality. Electron paramagnetic resonance (EPR) measurements confirmed the substitution of Co2+ inside the ZnO NRs, giving a highly anisotropic magnetic Co2+ signal. The substitution of Zn2+ by Co2+ was observed to be combined with a drastic reduction in the core-defect (CD) signal (g ~ 1.956) which is seen in pure ZnO NRs. As revealed by the cathodoluminescence (CL), the incorporation of Co causes a slight red-shift of the UV peak position combined with an enhancement in the intensity of the defect-related yellow-orange emission compared to pure ZnO NRs. Furthermore, the EPR and the CL measurements allow a possible model of the defect configuration in the samples. It is proposed that the as-synthesized pure ZnO NRs likely contain Zn interstitial (Zni+) as CDs and oxygen vacancy (VO) or oxygen interstitial (Oi) as surface defects. As a result, Co was found to likely occupy the Zni+, leading to the observed CDs reduction and hence enhancing the crystal quality. These results open the possibility of synthesis of highly crystalline quality ZnO NRs-based diluted magnetic semiconductors using the low-temperature aqueous chemical method. [ABSTRACT FROM AUTHOR]

Low temperature aqueous chemical synthesis (LT-ACS) of zinc oxide (ZnO) nanorods (NRs) has been attracting considerable research interest due to its great potential in the development of light-emitting diodes (LEDs). The influence of the molar ratio of the zinc acetate (ZnAc): KOH as a ZnO seed layer precursor on the density of interface defects and hence the presence of non-radiative recombination centers in LT-ACS of ZnO NRs/GaN LEDs has been systematically investigated. The material quality of the as-prepared seed layer as quantitatively deduced by the X-ray photoelectron spectroscopy is found to be influenced by the molar ratio. It is revealed by spatially resolved cathodoluminescence that the seed layer molar ratio plays a significant role in the formation and the density of defects at the n-ZnO NRs/p-GaN heterostructure interface. Consequently, LED devices processed using ZnO NRs synthesized with molar ratio of 1:5M exhibit stronger yellow emission (~575 nm) compared to those based on 1:1 and 1:3M ratios as measured by the electroluminescence. Furthermore, seed layer molar ratio shows a quantitative dependence of the non-radiative defect densities as deduced from light-output current characteristics analysis. These results have implications on the development of high-efficiency ZnO-based LEDs and may also be helpful in understanding the effects of the ZnO seed layer on defect-related non-radiative recombination. Published by AIP Publishing. [ABSTRACT FROM AUTHOR]

We present a study on n doping of C60 thin films by acridine orange base [3,6-bis(dimethylamino)acridine(AOB)] combining conductivity, field effect, and Seebeck measurements. An increase of more than six orders of magnitude in conductivity is observed for a doping ratio of 6 mol %, accompanied by a decrease in the activation energy from 0.64 to 0.15 eV compared to the undoped C60. We observe a clear doping effect immediately after sample preparation, but also a further activation by annealing or illumination. The field effect and Seebeck measurements confirm n-type conduction of C60 thin films and show that deep donor states are formed in AOB-doped C60 thin films. A field effect mobility of 0.2 cm2/V s is achieved for a doping level of 1.8 mol %. Near Infrared (NIR) and Fourier transform infrared (FTIR) spectra demonstrate electron transfer from the dopant to the matrix: For C60 doped with AOB, C60- is present in NIR absorption and FTIR spectra. On the other hand, a peak corresponding to acridine orange [3,6-bis(dimethylamino)acridinium chloride (AOBH+)] is also observed in the FTIR spectrum of C60:AOB, where AOBH+ corresponds to AOB with one additional proton attached. Electrochemical data of AOB and AOBH+ in acetontrile suggest that the AOB radical cation is not stable, but is rapidly transformed into a compound with similar properties to AOBH+. Conductivities of C60 thin films doped with bis(ethylenedithio)-tetrathiafulvalene were also investigated to confirm that the doping effect of AOB in C60 does not result from a simple electron transfer from AOB to C60. [ABSTRACT FROM AUTHOR]