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In this investigation, extensive simulations were performed for an AlGaN/GaN Dual-Gate MISHEMT configuration using ATLAS TCAD to optimize the device design for high power switching applications. We conducted a simulation study for the breakdown characteristics of a Dual-Gate AlGaN/GaN (DG)-MISHEMT with different gate lengths as explained in this paper. The optimized device with 0.25 µm gate length exhibits an breakdown voltage > 700 V and an cut-off frequency of 50 GHz when gate2 (G2) is attached to the source and bias is applied at gate1 (G1). We studied the impact on a breakdown characteristics and the frequency performance of different dimensions such as distance between the two gates (LGG), gate1-to-source distance (LG1S) and gate1-to-drain distance (LG1D). The optimized device design was further used to study the scattering-parameters for different gate combinations. Further improvement in breakdown voltage and Johnson's figure of merit (fT × VBR) is achieved for the DG-MISHEMT with HfO2–Al2O3 as gate insulator. [ABSTRACT FROM AUTHOR]

We proposed heavily doped silicon between insulators (HDSBI) MOSFETs to improve electrical characteristics of local BOX MOSFETs by using simple structures that combine local BOX regions with additional doped regions. HDSBI MOSFETs have heavily doped regions between local BOX regions, in which acceptors or traps are introduced. Simulated electrical characteristics demonstrated that they can suppress the SCEs and the kink effect, as well as the self-heating effect (SHE), which is suppressed by conventional local BOX MOSFETs. We elucidated how the additional doped regions in HDSBI MOSFETs suppress the SCEs and the kink effect. We concluded that HDSBI MOSFETs are suitable for applications, such as multi-purpose system-on-chip on which both short-channel logic circuits and high drive current circuits are integrated. [ABSTRACT FROM AUTHOR]

In this article, we present the thermal characteristics of the MOSFET with SELBOX structure. It is observed that the device shows a reduction in the self-heating effect and exhibits improved static and dynamic thermal behavior. A thermal model is developed to explain the thermal behavior of SELBOX structure. The model was evaluated using simulation implemented by Silvaco TCAD tools. Results show the effectiveness of the structure for the minimization of the self-heating effect (SHE) observed in SOI devices. Further, the results obtained from the simulation studies fit into the model showing the validity of the thermal circuit model. [ABSTRACT FROM AUTHOR]