1. Optical properties of (11¯01) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates
- Author
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Chiu, Ching-Hsueh, Lin, Da-Wei, Lin, Chien-Chung, Li, Zhen-Yu, Chen, Yi-Chen, Ling, Shih-Chun, Kuo, Hao-Chung, Lu, Tien-Chang, Wang, Shing-Chung, Liao, Wei-Tsai, Tanikawa, Tomoyuki, Honda, Yoshio, Yamaguchi, Masahito, and Sawaki, Nobuhiko
- Subjects
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OPTICAL properties of metals , *QUANTUM wells , *GALLIUM nitride , *LIGHT emitting diodes , *METAL organic chemical vapor deposition , *PHOTOLUMINESCENCE , *ATMOSPHERIC pressure , *ELECTRIC fields - Abstract
Abstract: We present a study of high quality (11¯01) GaN films and the InGaN/GaN multiple quantum wells (MQWs) using epitaxial lateral overgrowth (ELO) technique by atmospheric pressure metal organic chemical vapor deposition (MOCVD). The smooth coalescence of the stripes and surface morphology was measured by scanning electron microscope (SEM) and atomic force microscopy (AFM). Due to reduction in internal electric field, semipolar InGaN/GaN MQWs have higher radiative recombination rate from time-resolved photoluminescence (TRPL) measurement. In addition, from degree of polarization (DOP) measurement, we observed higher polarization ratio attributed to the induced anisotropic compressive strain. [Copyright &y& Elsevier]
- Published
- 2011
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