1. Molecular beam epitaxy growth of InSb1−x Bi x thin films.
- Author
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Song, Yuxin, Wang, Shumin, Saha Roy, Ivy, Shi, Peixiong, Hallen, Anders, and Lai, Zonghe
- Subjects
- *
MOLECULAR beam epitaxy , *INDIUM compounds , *THIN films , *SUBSTITUTION reactions , *SURFACE morphology , *GALLIUM , *DIFFUSION - Abstract
Abstract: Molecular beam epitaxy growth for InSb1−x Bi x thin films on (100) GaAs substrates is reported. Successful Bi incorporation for 2% is achieved, and up to 70% of the incorporated Bi atoms are at substitutional sites. The effects of growth parameters on Bi incorporation and surface morphology are studied. Strong In and Ga inter-diffusion induced by Bi incorporation is observed and discussed. [Copyright &y& Elsevier]
- Published
- 2013
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