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Start Over Author "Bietti S." Journal journal of crystal growth
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5. Effects of As pressure on the quality of GaAs/AlGaAs quantum dots grown on silicon by droplet epitaxy

Author

Giovanni Isella, Lucia Cavigli, S. Minari, Stefano Sanguinetti, Massimo Gurioli, S Adorno, Sergio Bietti, Anna Vinattieri, Bietti, S, Cavigli, L, Minari, S, Adorno, S, Isella, G, Vinattieri, A, Gurioli, M, and Sanguinetti, S

Subjects
Materials science, Silicon, business.industry, Physics::Optics, chemistry.chemical_element, GaAs, Molecular Beam Epitaxy, quantum nanostructures, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Condensed Matter Physics, Epitaxy, law.invention, Inorganic Chemistry, Laser linewidth, Quality (physics), chemistry, Quantum dot, law, Thermal, Materials Chemistry, Optoelectronics, Crystallization, business, FIS/03 - FISICA DELLA MATERIA, Molecular beam epitaxy
Abstract

In this work we show the possibility to increase the optical quality of quantum dots grown by droplet epitaxy on Ge-on-Si substrates in terms of single dot emission linewidth, decay time and efficiency by operating on the As pressure during the crystallization step without increasing the thermal budget. © 2013 Elsevier B.V. All rights reserved.

Published
2013
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