28 results on '"Hiramatsu K."'
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2. Reactor-pressure dependence of growth of a-plane GaN on r-plane sapphire by MOVPE
3. Microstructures of two-step facet-controlled ELO-GaN grown by MOVPE method—effect of mask geometry
4. Carrier-gas dependence of ELO GaN grown by hydride VPE
5. Microscopic crystalline structure of a thick AlN film grown on a trench-patterned AlN/α-Al2O3 template
6. Corrigendum to “Cross-sectional X-ray microdiffraction study of a thick AlN film grown on a trench-patterned AlN/α-Al2O3 template” [J. Cryst. Growth 381 (2013) 37–42, doi: 10.1016/j.jcrysgro.2013.07.012]
7. Cross-sectional X-ray microdiffraction study of a thick AlN film grown on a trench-patterned AlN/α-Al2O3 template
8. Characterization of mid-gap states in HVPE and MOVPE-grown n-type GaN
9. Local strain distribution of hexagonal GaN pyramids
10. New dopant precursors for n-type and p-type GaN
11. Metalorganic vapor phase epitaxy growth and characteristics of Mg-doped GaN using GaN substrates
12. The homoepitaxy of GaN by metalorganic vapor phase epitaxy using GaN substrates
13. The growth of thick GaN film on sapphire substrate by using ZnO buffer layer
14. Growth and characterization of InGaAs bulk crystals grown by liquid phase electro-epitaxy
15. The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer
16. Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE
17. Doping of GaN with Si and properties of blue m/i/n/n+ GaN LED with Si-doped n+-layer by MOVPE
18. Behaviour of anion vacancy in InxGa1-xAsyP1-y grown on (111)A and (100) GaAs
19. Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)
20. Hydride vapor-phase epitaxy growth of high-quality GaN bulk single crystal by epitaxial lateral overgrowth
21. The formation of crystalline defects and crystal growth mechanism in In~xGa~1~-~xN/GaN heterostructure grown by metalorganic vapor phase epitaxy
22. Sub-micron fine structure of GaN by metalorganic vapor phase epitaxy (MOVPE) selective area growth (SAG) and buried structure by epitaxial lateral overgrowth (ELO)
23. Zn related electroluminescent properties in MOVPE grown GaN
24. Doping of GaN with Si and properties of blue m/i/n/n + GaN LED with Si-doped n +-layer by MOVPE
25. Behaviour of anion vacancy in In xGa 1- xAs yP 1- y grown on (111)A and (100) GaAs
26. Selective growth of wurtzite GaN and Al~xGa~1~-~xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy
27. Cross-sectional X-ray microdiffraction study of a thick AlN film grown on a trench-patterned AlN/α-Al2O3 template.
28. Corrigendum to “Cross-sectional X-ray microdiffraction study of a thick AlN film grown on a trench-patterned AlN/α-Al2O3 template” [J. Cryst. Growth 381 (2013) 37–42, doi: 10.1016/j.jcrysgro.2013.07.012].
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