13 results on '"Iida, Daisuke"'
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2. Metalorganic vapor-phase epitaxial growth simulation to realize high-quality and high-In-content InGaN alloys
3. Enhanced light output power of InGaN-based amber LEDs by strain-compensating AlN/AlGaN barriers
4. Control of crystallinity of GaN grown on sapphire substrate by metalorganic vapor phase epitaxy using in situ X-ray diffraction monitoring method
5. In situ X-ray diffraction monitoring of GaInN/GaN superlattice during organometalic vapor phase epitaxy growth
6. In situ X-ray diffraction monitoring during metalorganic vapor phase epitaxy growth of low-temperature-GaN buffer layer
7. Compensation effect of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy
8. Growth of thick GaInN on grooved (1 0 1¯ 1¯) GaN/(1 0 1¯ 2¯) 4H-SiC
9. One-sidewall-seeded epitaxial lateral overgrowth of a-plane GaN by metalorganic vapor-phase epitaxy
10. Control of stress and crystalline quality in GaInN films used for green emitters
11. Control of p-type conduction in a-plane Ga 1−xIn xN (0< x
12. Growth of thick GaInN on grooved (101¯1¯) GaN/(101¯2¯) 4H-SiC
13. Control of p-type conduction in a-plane Ga1−xInxN (0<0.10) grown on r-plane sapphire substrate by metalorganic vapor-phase epitaxy
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