1. Surfaces and interfaces governing the OMVPE growth of APD-free GaP on AsH3-cleaned vicinal Si(100)
- Author
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William E. McMahon, Emily L. Warren, Alan E. Kibbler, Ryan M. France, Andrew G. Norman, Robert C. Reedy, Jerry M. Olson, Adele C. Tamboli, and Paul Stradins
- Subjects
010302 applied physics ,Carbon contamination ,Materials science ,Atmospheric oxygen ,Nanotechnology ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Epitaxy ,01 natural sciences ,Engineering physics ,Inorganic Chemistry ,0103 physical sciences ,Materials Chemistry ,Analysis tools ,0210 nano-technology ,Atmospheric contamination ,Vicinal - Abstract
Direct growth of GaP on Si enables the integration of III–V and Si optoelectronic devices for a wide variety of applications, and has therefore been the subject of much research for many decades. Most of this effort has been directed toward overcoming the two main technical challenges: 1) removing atmospheric oxygen and carbon contamination and 2) establishing the conditions needed for “APD-free” III–V epitaxy ( i.e ., without antiphase domains). We have developed an OMVPE process for APD-free GaP growth on Si which overcomes both challenges by using AsH 3 to clean and prepare the Si surface in situ at a relatively low temperature. This process is based upon a very brief “AsH 3 -cleaning” step which simultaneously removes atmospheric contamination (thereby eliminating the need for Si regrowth) and creates a single-domain As-terminated Si surface. Here we discuss the key process steps using results from a suite of analysis tools.
- Published
- 2016