13 results on '"Kordina, O."'
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2. Process stability and morphology optimization of very thick 4H–SiC epitaxial layers grown by chloride-based CVD
3. Improved morphology for epitaxial growth on 4° off-axis 4H-SiC substrates
4. Thick homoepitaxial layers grown on on-axis Si-face 6H- and 4H-SiC substrates with HCl addition
5. Bulk growth of 6H-SiC on non-basal quasi-polar faces
6. High growth rates (>30 μm/h) of 4H–SiC epitaxial layers using a horizontal hot-wall CVD reactor
7. Growth characteristics of SiC in a hot-wall CVD reactor with rotation
8. High growth rates (>30μm/h) of 4H–SiC epitaxial layers using a horizontal hot-wall CVD reactor
9. The material quality of CVD-grown SiC using different carbon precursors
10. In situ substrate preparation for high-quality SiC chemical vapour deposition
11. The mechanism for cubic SiC formation on off-oriented substrates
12. Growth of 3CSiC on on-axis Si(100) substrates by chemical vapor deposition
13. Growth of 3C [sbnd]SiC on on-axis Si(100) substrates by chemical vapor deposition
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