1. Vacancies as compensating centers in bulk GaN: doping effects
- Author
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Kimmo Saarinen, Tadeusz Suski, Izabella Grzegory, Michal Bockowski, and V. Ranki
- Subjects
Resistive touchscreen ,Materials science ,Condensed matter physics ,Radiochemistry ,Doping ,Fermi level ,chemistry.chemical_element ,Condensed Matter Physics ,Positron annihilation spectroscopy ,Inorganic Chemistry ,Condensed Matter::Materials Science ,symbols.namesake ,Positron ,chemistry ,Vacancy defect ,Physics::Atomic and Molecular Clusters ,Materials Chemistry ,symbols ,Gallium ,Positron annihilation - Abstract
Gallium vacancy complexes have been identified in n-type bulk GaN by applying positron annihilation spectroscopy. Their formation is suppressed when the material becomes resistive by Mg doping, as expected from the behavior of the VGa formation energy as a function of the Fermi level. In Be-doped GaN vacancies are observed even in resistive material. The positron lifetimes show that their open volume is larger than expected for the N vacancy. A possible identification is a VN–BeGa complex, where the atoms neighboring the N vacancy are strongly relaxed outwards, thus increasing the open volume.
- Published
- 2002
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