1. Characterization of closed space vapor transport GaP epitaxial layers
- Author
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M. B. Derbali, Hassen Maaref, J. Diaz, J. Mimila-Arroyo, D. Stievenard, J.C. Bourgoin, and S. Alaya
- Subjects
Deep-level transient spectroscopy ,Photoluminescence ,Solid-state physics ,Chemistry ,business.industry ,Analytical chemistry ,Condensed Matter Physics ,Epitaxy ,Electronic, Optical and Magnetic Materials ,Characterization (materials science) ,law.invention ,Condensed Matter::Materials Science ,law ,Materials Chemistry ,Optoelectronics ,Closed space ,Electrical and Electronic Engineering ,Electron paramagnetic resonance ,Luminescence ,business - Abstract
The growth of homoepitaxial GaP layers using Te-doped GaP as source material has been obtained by the so-called closed space vapor transport technique. The photoluminescence study shows that these layers, when grown under optimized thermodynamical conditions, have both a large luminescence efficiency and the same optical quality as the ones obtained by liquid phase epitaxy. The variation of the luminescence properties with the conditions of growth has been investigated. Both electron paramagnetic resonance and deep level transient spectroscopy detect the presence of deep levels that are not observed in liquid phase epitaxy materials.
- Published
- 1996
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