Search

Your search keyword '"Hsieh K"' showing total 18 results
Start Over Author "Hsieh K" Journal journal of electronic materials
18 results on '"Hsieh K"'

16. Microstructure and corrosion resistance of room-temperature RF sputtered Ta2O5 thin films.

Author

Chu, A., Chuang, M., Hsieh, K., Huang, H., Yu, Y., Wang, C., and Lin, E.

Abstract

The connection between the chemical corrosion resistance and the microstructure of the Ta2O5 thin films prepared at room temperature by a RF magnetron sputtering technique on Si substrates has been investigated. We find that the microstructure of the films changes with different RF sputtering power, and is responsible for the degradation of the corrosion resistance in HF solutions. The deposited films are amorphous and porous when the RF power is low. A preferred orientation toward (200) β-Ta2O5 can be observed when the RF power is increased to 150 W. In addition, the films deposited under this condition are dense and are consequently more resistant to the attack of chemicals. AT an RF power of 300 W the corrosion resistance of the films declines due to an increase of the exposed pore surface to the HF solution. [ABSTRACT FROM AUTHOR]

Published
1999
Full Text
View/download PDF

17. Properties and use of ln(AlGa)P and AlGa as native oxides in heterostructure lasers.

Author

Kish, F., Caracci, ., Holonyak, N., Hsieh, K., Baker, J., Maranowski, S., Sugg, A., Dallesasse, J., Fletcher, R., Kuo, C., Osentowski, T., and Craford, M.

Abstract

Data are presented demonstrating the formation of native oxides from high Al composition In(AlGa)P (x≳ 0.9) by simple annealing in a 'wet' ambient. The oxidation occurs by reaction of the high Al composition crystal with HO vapor (in a N carrier gas) at elevated temperatures (≥500° C) and results in stable transparent oxides. Secondary ion mass spectrometry (SIMS) as well as scanning and transmission electron microscopy (SEM and TEM) are employed to evaluate the oxide properties, composition, and oxide-semiconductor interface. The properties of native oxides of the In(AlGa)P system are compared to those of the AlGaAs system. Possible reaction mechanisms and oxidation kinetics are considered. The In(AlGa)P native oxide is shown to be of sufficient quality to be employed in the fabrication of stripe-geometry In(AlGa)P visible-spectrum laser diodes. [ABSTRACT FROM AUTHOR]

Published
1992
Full Text
View/download PDF

18. Properties and use of ln0.5(AlxGa1-x)0.5P and AlxGa1-x as native oxides in heterostructure lasers

Author

Kish, F., Caracci, ., Holonyak, N., Hsieh, K., Baker, J., Maranowski, S., Sugg, A., Dallesasse, J., Fletcher, R., Kuo, C., Osentowski, T., and Craford, M.

Abstract

Abstract: Data are presented demonstrating the formation of native oxides from high Al composition In0.5(AlxGa1-x)0.5P (x≳ 0.9) by simple annealing in a “wet” ambient. The oxidation occurs by reaction of the high Al composition crystal with H2O vapor (in a N2 carrier gas) at elevated temperatures (≥500� C) and results in stable transparent oxides. Secondary ion mass spectrometry (SIMS) as well as scanning and transmission electron microscopy (SEM and TEM) are employed to evaluate the oxide properties, composition, and oxide-semiconductor interface. The properties of native oxides of the In0.5(AlxGa1-x)0.5P system are compared to those of the AlxGa1-xAs system. Possible reaction mechanisms and oxidation kinetics are considered. The In0.5(AlxGa1-x)0.5P native oxide is shown to be of sufficient quality to be employed in the fabrication of stripe-geometry In0.5(AlxGa1-x)0.5P visible-spectrum laser diodes.

Published
1992
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results