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Abstract: Growth and characterization results are presented for pseudomorphic high electron mobility transistor structures with InxGa1-xAs single quantum well and GaAs(h 1)In x Ga1−x As(h 2) thin strained superlattice active layers where 0.25≤x ≤ 0.4. All of the samples were grown by molecular beam epitaxy. Hall effect at 77 K, photoluminescence at 2 K, in-situ reflection high energy electron diffraction, and transmission electron microscopy measurements are discussed. Critical layer thickness measurements are compared with the Matthews-Blakeslee theory. Photoluminescence transition energies are compared with a self-consistent solution to Schrodinger’s and Poisson’s equations.