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As the technology scales down, shrinking geometry and layout dimension, on- chip interconnects are exposed to different noise sources such as crosstalk coupling, supply voltage fluctuation and temperature variation that cause random and burst errors. These errors affect the reliability of the on-chip interconnects. Hence, error correction codes integrated with noise reduction techniques are incorporated to make the on-chip interconnects robust against errors. The proposed error correction code uses triplication error correction scheme as crosstalk avoidance code (CAC) and a parity bit is added to it to enhance the error correction capability. The proposed error correction code corrects all the error patterns of one bit error, two bit errors. The proposed code also corrects 7 out of 10 possible three bit error patterns and detects burst errors of three. Hybrid Automatic Repeat Request (HARQ) system is employed when burst errors of three occurs. The performance of the proposed codec is evaluated for residual flit error rate, codec area, power, delay, average flit latency and link energy consumption. The proposed codec achieves four magnitude order of low residual flit error rate and link energy minimization of over 53 % compared to other existing error correction schemes. Besides the low residual flit error rate, and link energy minimization, the proposed codec also achieves up to 4.2 % less area and up to 6 % less codec power consumption compared to other error correction codes. The less codec area, codec power consumption, low link energy and low residual flit error rate make the proposed code appropriate for on chip interconnection link. [ABSTRACT FROM AUTHOR]

Two error correction schemes are proposed for word-oriented binary memories that can be affected by erasures, i.e. errors with known location but unknown value. The erasures considered here are due to the drifting of the electrical parameter used to encode information outside the normal ranges associated to a logic 0 or a logic 1 value. For example, a dielectric breakdown in a magnetic memory cell may reduce its electrical resistance sensibly below the levels which correspond to logic 0 and logic 1 values stored in healthy memory cells. Such deviations can be sensed during memory read operations and the acquired information can be used to boost the correction capability of an error-correcting code (ECC). The proposed schemes enable the correction of double-bit errors based on the combination of erasure information with single-bit error correction and double-bit error detection (SEC-DED) codes or shortened (SEC) codes. The correction of single-bit errors is always guaranteed. Ways to increase the number of double-bit and triple-bit errors that can be detected by shortened SEC and SEC-DED codes are considered in order to augment the error correction capability of the proposed solutions. [ABSTRACT FROM AUTHOR]