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The mobility of pristine amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) is insufficient to meet the requirement of the future ultra-high-definition displays. Reported herein is the fabrication of hydrogenated long-channel IGZO TFTs exhibiting a transconductance and an on/off ratio that are orders of magnitude superior to those of the regular devices. The gate bias stability of the treated IGZO TFTs was greatly enhanced, with the threshold voltage shifting by less than 1 V after 1 h stress. Experimentally, the hydrogenation of the active layer was achieved via the deposition of a SiNx/SiOx bilayer on top of the IGZO via plasma-enhanced chemical vapor deposition followed by post-annealing under optimized conditions. The elemental depth profiles indicated that this enhanced performance originated from the hydrogen doping of the IGZO film. Furthermore, a dual-gate structure was fabricated to alleviate the deterioration of the subthreshold properties induced by the excess hydrogen doping. [ABSTRACT FROM AUTHOR]

Recent studies on organic thin-film transistors (OTFTs) have reported high mobility values, but many of them showed non-ideal current-voltage characteristics that could lead to the overestimation of the mobility values. In this study, the non-ideal transistor behavior was briefly investigated by considering the effect of charge injection, and a method of overcoming the effect was developed. Correspondingly, various charge injection layers were developed, and their effects on the modification of metal contacts, including work function tuning and interfacial doping, were studied. The materials that had been coated formed a good metal-semiconductor interface through fine manipulation in the wetting and dewetting of the selected liquid. With such electrodes, the OTFTs were fabricated at room temperature and exhibited almost ideal transistor behavior in terms of the current-voltage characteristics, featuring high (over 10 cm2/Vs) field-effect mobility. [ABSTRACT FROM AUTHOR]

Fully printed electronics on plastic have attracted considerable interest owing to their high compatibility and ease of integration. Here, an ultra-high-resolution printing technique based on parallel vacuum ultraviolet patterning that can produce high-contrast wettability regions on flexible substrates was developed. This technique was used to selectively deposit a functional ink with a 1µm feature size, thereby allowing the large-scale fabrication of organic thin-film transistors with channels as short as 1µm under an ambient atmosphere. Moreover, in short-channel devices, hole injection barriers can be tuned by printing the optimum gate overlaps associated with selectively doping semiconductor/electrode interfaces, resulting in a marked reduction in contact resistance from 20 to 1.5 kΩcm, and an elevation of the charge carrier mobility to a record high of 0.3 cm2 V-1 s-1 in a 1-µm-channel device. The results indicate that the developed technique is promising for the fabrication of large-area, high-resolution, low-cost electronics. [ABSTRACT FROM AUTHOR]