Search

Eu 0.65 Sr 0.35 Fe x Mn 1− x O 3 ( x =0.1, 0.3 and 0.5) has been prepared using a standard solid state reaction method. The under-investigation compounds is found to crystallize in a single-phase orthorhombic structure in the P bnm space group (62). The adiabatic polaron electronic transfer was obtained for all samples and the activation energy of x =0.1 sample is equal to 1.013 meV and slightly increase at x =0.3 (1.289 meV) while is doubled for x =0.5 to be 2.1065 meV. The magnetization–temperature dependence measurements of Eu 0.65 Sr 0.35 Fe x Mn 1− x O 3 show the ferromagnetic ordering at low iron concentration x =0.1 and when iron concentration increase to x =0.5 the noncollinear magnetic ordering (the canted antiferromagnetic) is obtained. The magnetic phase transition (paramagnetic-ferromagnetic transition) in the Eu 0.65 Sr 0.35 Fe 0.1 Mn 0.9 O 3 is observed at T c of 150 K. For Eu 0.65 Sr 0.35 Fe 0.5 Mn 0.5 O 3 the multi-magnetic phase transition is observed at T c of 200K and T N of 430 K. The resistivity at low temperature is measured. Theoretical Calculations using Monte Carlo code have been done. The magnetization as function of temperature has been calculated using Monte Carlo simulations for Eu 0.65 Sr 0.35 Fe x Mn 1− x O 3 ( x =0.0, 0.1, 0,2, 0.3, 0.4 and 0.5). Ising model is a suitable model to study the magnetization for our compounds. The internal energy for x =0 is the highest value compared with the other x values which have nearly a ground state value equal to 2.7 J [ABSTRACT FROM AUTHOR]

• Monte Carlo study for the charge ordering in half-doped manganites. • The dependence of the electrical and magnetoresistance and magnetization on the charge ordering. • The behavior of the manganites because of the charge ordering phase is semiconductor like. • These behaviors nominate the half-doped manganites to be used in diode junction applications. The Monte Carlo Antiferromagnetic Ising model was used to study the electrical properties and magnetoresistance of manganese oxides due to the charge ordering phase occurring at half doping, x = 0.5. The half-doped manganites have an insulator antiferromagnetic ground state. The internal energy, specific heat, resistivity, the magneto-resistance and magnetization have been investigated with different applied magnetic fields. Our simulation reveals that the resistivity decreases exponentially as the free charge increase to transport from the insulator to conductor phase. The magnetoresistance has positive high values with magnetic field. The obtained insulator–metal transition behavior candidates the half-doped manganites to be very good semiconductors diode junctions. [ABSTRACT FROM AUTHOR]