1. Silane- and triazine-containing hole and exciton blocking material for high-efficiency phosphorescent organic light emitting diodes
- Author
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Kyung Mo Yoo, Hyung Dol Park, Won Ik Jeong, Ji Whan Kim, Kyoungmoon Go, Jang-Joo Kim, Sehoon Kim, Deug Sang Lee, Jae-Wook Kang, and Young-Seo Park
- Subjects
Chemistry ,business.industry ,Doping ,Quantum yield ,chemistry.chemical_element ,General Chemistry ,Photochemistry ,Silane ,law.invention ,chemistry.chemical_compound ,law ,Materials Chemistry ,OLED ,Optoelectronics ,Quantum efficiency ,Iridium ,business ,Phosphorescence ,Light-emitting diode - Abstract
One of the important factors for high efficiency phosphorescent organic light-emitting devices is to confine triplet excitons within the emitting layer. We synthesized and characterized a new hole blocking material containing silane and triazine moieties, 2,4-diphenyl-6-(4′-triphenylsilanyl-biphenyl-4-yl)-1,3,5-triazine (DTBT). Electrophosphorescent devices fabricated using the material as the hole-blocking layer and N,N′-dicarbazolyl-4,4′-biphenyl (CBP) doped with fac-tris(2-phenylpyridine)iridium [Ir(ppy)3] as the emitting layer showed a maximum external quantum efficiency (ηext) of 17.5% with a maximum power efficiency (ηp) of 47.8 lm W−1, which are much higher than those of devices using bathcuproine (BCP) (ηext = 14.5%, ηp = 40.0 lm W−1) and 4-biphenyloxolate aluminium(III) bis(2-methyl-8-quinolinato)-4-phenylphenolate (BAlq) (ηext = 8.1%, ηp = 14.2 lm W−1) as hole-blocking layers.
- Published
- 2007
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