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Diamond like semiconductors (DLS) have emerged as candidates for thermoelectric energy conversion. Towards understanding and optimizing performance, we present a comprehensive investigation of the electronic properties of two DLS phases, quaternary Cu2HgGeTe4 and related ordered vacancy compound Hg2GeTe4, including thermodynamic stability, defect chemistry, and transport properties. To establish the thermodynamic link between the related but distinct phases, the stability region for both is visualized in chemical potential space. In spite of their similar structure and bonding, we show that the two materials exhibit reciprocal behaviors for dopability. Cu2HgGeTe4 is degenerately p-type in all environments despite its wide stability region, due to the presence of low-energy acceptor defects VCu and CuHg and is resistant to extrinsic n-type doping. Meanwhile Hg2GeTe4 has a narrow stability region and intrinsic behavior due to the relatively high formation energy of native defects, but presents an opportunity for bi-polar doping. While these two compounds have similar structure, bonding, and chemical constituents, the reciprocal nature of their dopability emerges from significant differences in band edge positions. A Brouwer band diagram approach is utilized to visualize the role of native defects on carrier concentrations, dopability, and transport properties. This study elucidates the doping asymmetry between two solid-solution forming DLS phases Cu2HgGeTe4 and Hg2GeTe4 by revealing the defect chemistry of each compound, and suggests design strategies for defect engineering of DLS phases.

The optimization and application of new functional materials depends critically on our ability to manipulate the charge carrier density. Despite predictions of good n-type thermoelectric performance in the quaternary telluride diamond-like semiconductors (e.g. Cu2HgGeTe4), our prior experimental survey indicates that the materials exhibit degenerate p-type carrier densities (>1020 h+ cm−3) and resist extrinsic n-type doping. In this work, we apply the technique of phase boundary mapping to the Cu2HgGeTe4 system. We begin by creating the quaternary phase diagram through a mixture of literature meta-analysis and experimental synthesis, discovering a new material (Hg2GeTe4) in the process. We subsequently find that Hg2GeTe4 and Cu2HgGeTe4 share a full solid solution. An unusual affinity for CuHg and HgCu formation within Cu2HgGeTe4 leads to a relatively complex phase diagram, rich with off-stoichiometry. Through subsequent probing of the fourteen pertinent composition-invariant points formed by the single-phase region, we achieve carrier density control ranging from degenerate (>1021 h+ cm−3) to non-degenerate (

Binary Co4Sb12 skutterudite (also known as CoSb3) has been extensively studied; however, its mixed-anion counterparts remain largely unexplored in terms of their phase stability and thermoelectric properties. In the search for complex anionic analogs of the binary skutterudite, we begin by investigating the Co4Sb12–Co4Sn6Te6 pseudo-binary phase diagram. We observe no quaternary skutterudite phases and as such, focus our investigations on the ternary Co4Sn6Te6via experimental phase boundary mapping, transport measurements, and first-principles calculations. Phase boundary mapping using traditional bulk syntheses reveals that the Co4Sn6Te6 exhibits electronic properties ranging from a degenerate p-type behavior to an intrinsic behavior. Under Sn-rich conditions, Hall measurements indicate degenerate p-type carrier concentrations and high hole mobility. The acceptor defect SnTe, and donor defects TeSn and Coi are the predominant defects and rationally correspond to regions of high Sn, Te, and Co, respectively. Consideration of the defect energetics indicates that p-type extrinsic doping is plausible; however, SnTe is likely a killer defect that limits n-type dopability. We find that the hole carrier concentration in Co4Sn6Te6 can be further optimized by extrinsic p-type doping under Sn-rich growth conditions.

Recent, and somewhat surprising, successful n-type doping of Mg3Sb2 was the key to realizing high thermoelectric performance in this material. Herein, we use first-principles defect calculations to investigate different extrinsic n-type doping strategies for Mg3Sb2 and to reveal general chemical trends in terms of dopant solubilities and maximal achievable electron concentrations. In agreement with experiments, we find that Sb substitution is an effective doping strategy, with Se and Te doping predicted to yield up to ∼8 × 1019 cm−3 electrons. However, we also find that Mg substitution with trivalent (or higher) cations can be even more effective; in particular, the predicted highest achievable electron concentration (∼5 × 1020 cm−3) with La as an extrinsic dopant exceeds that of Se and Te doping. Interstitial doping (Li, Zn, Cu, Be) is found to be largely ineffective either due to self-compensation (Li) or high formation energy (Zn, Cu, Be). Our results offer La as an alternative dopant to Te and Se and reinforce the need for careful phase boundary mapping in achieving high electron concentrations in Mg3Sb2.

High-throughput calculations (first-principles density functional theory and semi-empirical transport models) have the potential to guide the discovery of new thermoelectric materials. Herein we have computationally assessed the potential for thermoelectric performance of 145 complex Zintl pnictides. Of the 145 Zintl compounds assessed, 17% show promising n-type transport properties, compared with only 6% showing promising p-type transport. We predict that n-type Zintl compounds should exhibit high mobility μn while maintaining the low thermal conductivity κL typical of Zintl phases. Thus, not only do candidate n-type Zintls outnumber their p-type counterparts, but they may also exhibit improved thermoelectric performance. From the computational search, we have selected n-type KAlSb4 as a promising thermoelectric material. Synthesis and characterization of polycrystalline KAlSb4 reveals non-degenerate n-type transport. With Ba substitution, the carrier concentration is tuned between 1018 and 1019 e− cm−3 with a maximum Ba solubility of 0.7% on the K site. High temperature transport measurements confirm a high μn (50 cm2 V−1 s−1) coupled with a near minimum κL (0.5 W m−1 K−1) at 370 °C. Together, these properties yield a zT of 0.7 at 370 °C for the composition K0.99Ba0.01AlSb4. Based on the theoretical predictions and subsequent experimental validation, we find significant motivation for the exploration of n-type thermoelectric performance in other Zintl pnictides.

Historically, the improved thermoelectric performance of skutterudite compounds has largely been driven by the incorporation of electropositive donors on interstitial sites. These “rattlers” serve to optimize both electronic and thermal properties by tuning the carrier concentration and scattering phonons. In this work, we show that interstitial bromine can be incorporated into CoSb3 and assess the impact on electronic and thermal transport. In contrast to prior high pressure syntheses with iodine, interstitial bromine incorporation is achieved at ambient pressure. Transport properties are stable up to at least 375 °C. Bromine serves as an electronegative acceptor and can induce degenerate (>5 × 1019 cm−3) hole densities. In contrast to other p-type skutterudite compositions, bromine preserves the intrinsically high hole mobility of CoSb3 while significantly reducing the lattice thermal conductivity. The development of a stable p-type dopant for the interstitial filler site enables the development of skutterudites with both donor and acceptor interstitials to maximize phonon scattering while maintaining the high mobility of CoSb3.