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We demonstrate a facile approach to solution-based synthesis of wafer-scale epitaxial bismuth vanadate (BiVO4) thin films by spin-coating on yttria-stabilized zirconia. Epitaxial growth proceeds via solid-state transformation of initially formed polycrystalline films, driven by interface energy minimization. The (010)-oriented BiVO4 films are smooth and compact, possessing remarkably high structural quality across complete 2′′ wafers. Optical absorption is characterized by a sharp onset with a low sub-band gap response, confirming that the structural order of the films results in correspondingly high optoelectronic quality. This combination of structural and optoelectronic quality enables measurements that reveal a strong optical anisotropy of BiVO4, which leads to significantly increased in-plane optical constants near the fundamental band edge that are of particular importance for maximizing light harvesting in semiconductor photoanodes. Temperature-dependent transport measurements confirm a thermally activated hopping barrier of ∼570 meV, consistent with small electron polaron conduction. This simple approach for synthesis of high-quality epitaxial BiVO4, without the need for complex deposition equipment, enables a broadly accessible materials base to accelerate research aimed at understanding and optimizing photoelectrochemical energy conversion mechanisms. [ABSTRACT FROM AUTHOR]

The (opto)electronic properties of Ta3N5 photoelectrodes are often dominated by defects, such as oxygen impurities, nitrogen vacancies, and low-valent Ta cations, impeding fundamental studies of its electronic structure, chemical stability, and photocarrier transport. Here, we explore the role of ammonia annealing following direct reactive magnetron sputtering of tantalum nitride thin films, achieving near-ideal stoichiometry, with significantly reduced native defect and oxygen impurity concentrations. By analyzing structural, optical, and photoelectrochemical properties as a function of ammonia annealing temperature, we provide new insights into the basic semiconductor properties of Ta3N5, as well as the role of defects on its optoelectronic characteristics. Both the crystallinity and material quality improve up to 940 °C, due to elimination of oxygen impurities. Even higher annealing temperatures cause material decomposition and introduce additional disorder within the Ta3N5 lattice, leading to reduced photoelectrochemical performance. Overall, the high material quality enables us to unambiguously identify the nature of the Ta3N5 bandgap as indirect, thereby resolving a long-standing controversy regarding the most fundamental characteristic of this material as a semiconductor. The compact morphology, low defect content, and high optoelectronic quality of these films provide a basis for further optimization of photoanodes and may open up further application opportunities beyond photoelectrochemical energy conversion. [ABSTRACT FROM AUTHOR]

We demonstrate a facile approach to solution-based synthesis of wafer-scale epitaxial bismuth vanadate (BiVO 4 ) thin films by spin-coating on yttria-stabilized zirconia. Epitaxial growth proceeds via solid-state transformation of initially formed polycrystalline films, driven by interface energy minimization. The (010)-oriented BiVO 4 films are smooth and compact, possessing remarkably high structural quality across complete 2'' wafers. Optical absorption is characterized by a sharp onset with a low sub-band gap response, confirming that the structural order of the films results in correspondingly high optoelectronic quality. This combination of structural and optoelectronic quality enables measurements that reveal a strong optical anisotropy of BiVO 4 , which leads to significantly increased in-plane optical constants near the fundamental band edge that are of particular importance for maximizing light harvesting in semiconductor photoanodes. Temperature-dependent transport measurements confirm a thermally activated hopping barrier of ∼570 meV, consistent with small electron polaron conduction. This simple approach for synthesis of high-quality epitaxial BiVO 4 , without the need for complex deposition equipment, enables a broadly accessible materials base to accelerate research aimed at understanding and optimizing photoelectrochemical energy conversion mechanisms., Competing Interests: There are no conflicts to declare., (This journal is © The Royal Society of Chemistry.)

The (opto)electronic properties of Ta 3 N 5 photoelectrodes are often dominated by defects, such as oxygen impurities, nitrogen vacancies, and low-valent Ta cations, impeding fundamental studies of its electronic structure, chemical stability, and photocarrier transport. Here, we explore the role of ammonia annealing following direct reactive magnetron sputtering of tantalum nitride thin films, achieving near-ideal stoichiometry, with significantly reduced native defect and oxygen impurity concentrations. By analyzing structural, optical, and photoelectrochemical properties as a function of ammonia annealing temperature, we provide new insights into the basic semiconductor properties of Ta 3 N 5 , as well as the role of defects on its optoelectronic characteristics. Both the crystallinity and material quality improve up to 940 °C, due to elimination of oxygen impurities. Even higher annealing temperatures cause material decomposition and introduce additional disorder within the Ta 3 N 5 lattice, leading to reduced photoelectrochemical performance. Overall, the high material quality enables us to unambiguously identify the nature of the Ta 3 N 5 bandgap as indirect, thereby resolving a long-standing controversy regarding the most fundamental characteristic of this material as a semiconductor. The compact morphology, low defect content, and high optoelectronic quality of these films provide a basis for further optimization of photoanodes and may open up further application opportunities beyond photoelectrochemical energy conversion., Competing Interests: There are no conflicts to declare., (This journal is © The Royal Society of Chemistry.)