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A dual-emission ratio fluorescence probe (NL-CDs/Cu–Cy–I) was fabricated via an electrostatic self-assembly method. NL-CDs served as the reference signal (Em = 433 nm), remaining insensitive to amoxicillin, while Cu–Cy–I acted as the response signal (Em = 601 nm), exhibiting varying degrees of fluorescence quenching with amoxicillin concentration changes. This established a fluorescence sensing platform leveraging internal filtration and static quenching synergistically, ensuring high specificity. Compared to the single-signal Cu–Cy–I fluorescence probe, the detection range expanded from 0.5–15 μmol L−1 to 0.2–30 μmol L−1, with the detection limit decreasing from 0.12 μmol L−1 to 0.073 μmol L−1, demonstrating significant enhancements in both range and limit. The developed ratiometric fluorescent probe was effectively employed for amoxicillin monitoring in environmental water samples, urine samples, and amoxicillin capsules, achieving recovery rates of 96.5–102.9%. This underscores the accuracy and practical applicability of the NL-CDs/Cu–Cy–I ratio fluorescence probe-based fluorescence analysis method for amoxicillin detection. [ABSTRACT FROM AUTHOR]

Indium phosphide (InP) has a higher electron mobility, electron saturation velocity, and drain current than silicon (Si), and the ultra-thin (UT) InP field-effect transistor (FET) probably possesses a better device performance than the UT Si counterpart. Recently, InP film has been successfully grown with a thickness down to 6.3 nm. In this paper, we study the device performance of the n-type sub-5 nm monolayer (ML) InP (the limitation of UT InP film) FETs based on the ab initio quantum transport simulation. The on-state current, intrinsic delay time, and power-delay product of the ML InP FETs could meet the International Technology Roadmap for Semiconductors (ITRS) demands for the high-performance/low-power devices until the gate length is reduced to 2/4 nm. In addition, we investigate the effect of strain on the ML InP FETs, but unfortunately, strain cannot significantly improve the device performance. Therefore, UT InP is a potential channel candidate for next-generation FETs. [ABSTRACT FROM AUTHOR]

The two-dimensional (2D) transition-metal dichalcogenides (TMDs) field effect transistor (FET) with in-plane heterojunction contacts between the semiconducting 2H phase (as channel) and the metallic 1T or semi-metallic 1T′ phase (as electrode) has received much recent attention because it has significantly reduced contact resistance and enhanced gate tunability and thus improved device performance. However, the underlying mechanism of its good conductivity remains open. We systematically explore for the first time the contact properties of the monolayer (ML) 2H MX2 (MoS2, WS2, MoSe2, WSe2, MoTe2) FET with their 1T′ phase as electrode by using ab initio quantum transport simulations. We find that the metal induced gap states (MIGS) at the interface penetrate the Schottky barrier and bridge the electrodes and the conduction/valence band of the channel, thereby forming a lower and tunable effective Schottky barrier height (ESBH) and causing an equivalent Ohmic contact under the appropriate gate voltage. Our study provides a new insight into the observed reduced contact resistance with the 1T′ phase as electrode and is instructive for further experiment. [ABSTRACT FROM AUTHOR]