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Asperity flattening study plays an important role in predicting the friction behavior at the interface and the surface roughness transfer during sheet metal-forming process. This paper presents a comparison of asperity flattening activities under 1-wavelength, 2-wavelength and 3-wavelength finite-element models developed based on a power spectral density (PSD) analysis of measured data on steel sheet surfaces. First, a proper asperity thickness for the modeling has been determined by the investigation of plastic strain distribution along the depth of asperity. The comparison then examines the evolution of real contact area, surface roughness, contact pressure distribution and variation of friction force at the interface between a tool and a workpiece drawn from different wavelength simplification models under various friction conditions. It is concluded that 3-wavelength model has closer results to experimental measurements and introduces less contact area and more local pressure concentrations than those from the other two models. [Copyright &y& Elsevier]

In this paper, the revolutions of wafer and pad were considered the same and the force forms including the pressure exerted on the top of wafer surface and the carrier back pressure were axisymmetric distributed, a 2D axisymmetric quasi-static model for chemical mechanical polishing process (CMP) was first established. Based on the principle of minimum total potential energy, a 2D axisymmetric quasi-static finite element model with a carrier back pressure compensation for CMP was then established. In this model, the four-layer structures including wafer carrier, carrier film, wafer and pad are involved. The effect of a given carrier back pressure on the stress components and von Mises stress on wafer surface was analyzed and the effect of different carrier back pressures on the von Mises stress and nonuniformity on wafer surface was investigated. The findings indicated that the axial stress was the dominant factor to the von Mises stress distribution on wafer surface. Because that the back pressure had the maximum affect on the axial stress and it made the axial stress increased along the −z direction. Thus, while applying a back pressure, the von Mises stress distribution increased. In addition, the changes of back pressure had the trend to be proportional to the von Mises stress variation and to be inversely proportional to the nonuniformity variation. The result showed obviously that during the CMP process, it could achieve the purpose to improve the planarization of wafer surface by compensating the different carrier back pressures. [Copyright &y& Elsevier]

In this paper, we use a prevalent finite element analysis software, MARC, to simulate the process for a subject material undergoing equal channel angular extrusion (ECAE), as well as calculating the strain conditions. For a single ECAE pass, the transversal strain distribution in the deformed body will be analyzed to investigate the influences from channel angle, friction between die and pressed material, and curved joining channels. Simulations involving double passes of the subject material were also conducted, something that has not been previously pursued much elsewhere. [Copyright &y& Elsevier]