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The room temperature photoelectric response of undoped and lithium-doped Zn1-xMgxTe (0 ? x ? 0.50) alloys has been measured in the wavelength range 0.50 ? ? ? 3.0 µm. The response curve for undoped samples is characterized by a single peak in the band edge region. The peak shifts with composition in accordance with the expected shift in the energy band gap. Lithium-doped samples show an additional peak centred at 1.04 eV for all compositions. This peak is attributed to photo-generated holes in the split-off band created as the result of electronic transitions to shallow acceptor impurities.