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In this study, coumarin-doped Pr2Se3-Tl2Se (0.00, 0.05, 0.1, 0.3 wt% coumarin) were covered on the front side of a p-Si substrate by drop coating method and thus Al/coumarin doped Pr2Se3-Tl2Se/p-Si diodes were fabricated. The electronic and optoelectronic properties of the prepared diodes were investigated. The highest rectification ratio (RR = IF/IR) value was found to be 2.24 × 105 for the diode having 0.05 wt% coumarin doping at dark and ± 5 V. Also, the highest Iphoto/Idark photosensitivity was found to be 1327 for the diode which has 0.1 wt% coumarin doping at 100 mW/cm2 and − 5 V. The photocurrent of the diodes is higher than the dark current and increases by the increase of the light intensity. These results confirm that the fabricated diodes show a strong photovoltaic behavior. The electronic parameters of the diodes, for example ideality factor and barrier height values, were calculated by the use of current-voltage characteristics. The transient measurement proves that the diodes show both photodiode and photocapacitor behaviors. The change on the conductance and capacitance by the frequency is attributed to the existence of interface states. Thus, the obtained results suggest that the prepared diodes might be used as a photosensor in the applications of optoelectronic. [ABSTRACT FROM AUTHOR]

In order to achieve high conductivity and transmittance of transparent conducting oxide, Mg doped SnO 2 (Mg xSn 1−xO 2) thin films have been fabricated and characterized to investigate their structural and optical properties. The Mg xSn 1−xO 2 thin films have been deposited on glass substrate using aero-sole assisted chemical vapor deposition. The molar concentration of Mg contents was changed from 0 to 8 %. The confirmation of tetragonal structure and particle size (32–87 nm) of thin films was analyzed by X-ray diffraction. The surface roughness has been found to decrease with the increase of the dopant concentration as investigated by atomic force microscopy. The optical transmission increased from 54 to 78 % and the band gap of pure SnO 2 has been found to be 3.75 eV while it rises up to 3.88 eV with increasing Mg doping. The sheet resistance (R s) of undoped SnO 2 is maximum which become lowest at 4 % Mg doped SnO 2. [ABSTRACT FROM AUTHOR]