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Programmable metallization cell (PMC) memory is a kind of next generation non-volatile memory that has attracted increasing attention in recent years as a possible replacement for flash memory. In spite of the considerable amount of research focused on the fabrication of non-volatile memories on plastic substrates with lightweight, thin, and bendable characteristics, there have been few studies on the fabrication of PCM memory on flexible substrates. In this study, we synthesized AgSe nanoparticles (NPs) by a positive-microemulsion method and constructed PMC memories on plastic substrates with programmable layers formed by the spin-coating of the AgSe NPs. To the best of the knowledge, this is the first attempt to construct PMC memory on plastic substrates by the spin-coating of AgSe NPs. The AgSe NPs synthesized in this study had a uniform size of 2 nm and interestingly showed α-phase (high temperature phase) stability at room temperature. Switching behaviors were observed through the voltage scanning on the fabricated memories with applicable switching voltages. However, the resistance ratios of the off-state to the on-state were quite small. The possible reasons for the α-phase stability of the AgSe NPs at room temperature and the detailed memory characteristics will be described in this article. [ABSTRACT FROM AUTHOR]

In this study, Si-nanoparticle(NP)/Si-nanowire(NW)-based field-effect transistors (FETs) with a top-gate geometry were fabricated and characterized. In these FETs, Si NPs were embedded as localized trap sites in Al2O3 top-gate layers coated on Si NW channels. Drain current versus drain voltage ( I DS− V DS) and drain current versus gate voltage ( I DS− V GS) were measured for the Si NP/Si NW-based FETs to investigate their electrical and memory characteristics. The Si NW channels were depleted at V GS = 9 V, indicating that the devices functioned as p-type depletion-mode FETs. The top-gate Si NW-based FETs decorated with Si NPs show counterclockwise hysteresis loops in the I DS− V GS curves, revealing their significant charge storage effect. [ABSTRACT FROM AUTHOR]