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This contribution deals with flexographic printing of nanoparticulate tin-doped indium oxide (ITO) inks for the manufacture of fine lines on PET foils and glass substrates. The development and optimization of ITO inks, based on solutions of water and ethanol, for the flexographic printing process is presented. The influence of the solvent composition, of the particle content, and of the molar mass of the binder polyvinylpyrrolidone on the printing result is shown. ITO lines with a minimum line width of around 120 μm were printed using a printing plate with a feature size of 50 μm; the ITO lines exhibited a thickness of around 1 μm. Laser post-treatment was used to consolidate the top layer of the nanoparticulate ITO structures resulting in improved electrical properties; low sheet resistance values of around 300 Ω/□ were achieved. [ABSTRACT FROM AUTHOR]

This paper presents the manufacture of ultrathin (<1 µm) transparent conductive indium tin oxide (ITO) films based on nanoparticulate ITO slurries by the profile rod technique using the binder polyvinyl pyrrolidone (PVP) as an organic additive. The influence of the slurry composition on the film thickness and the specific electrical resistance as well as the transmission of the dried films is evaluated. The organic solvent ethanol and different types of the PVP binder were tested for slurry preparation and layer performance. ITO green films with low specific electrical resistance of 3 Ω cm, 87 % inline transmission, and layer thicknesses of only 250 nm could be manufactured. Furthermore, the influence of heat treatments up to 400 °C on the electrical properties of the ITO films was evaluated. [ABSTRACT FROM AUTHOR]

This manuscript presents the conceptional design of indium tin oxide inkjet inks for the manufacture of electron devices. For this purpose, the process window of the printer used is identified and the inks are conceived to meet the requirements. The nano-particles are effectively stabilized in different dispersion media. The rheological, the wetting and the drying behavior of the inks are adapted to the inkjet process and the substrates to be coated. To assemble a field effect transistor (FET), the most suitable ink is chosen and source and drain contacts are printed. In the device, a nano-particulate ZnO layer acts as semiconducting layer and the gate electrode as well as the dielectric layer is formed by a thermally oxidized silicon wafer. The electron device assembled shows the typical FET characteristic proving its functionality. [ABSTRACT FROM AUTHOR]