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Extreme ultraviolet (EUV) lithography utilizes photons with 92 eV energy to ionize resists, generate secondary electrons, and enable electron driven reactions that produce acid in chemically amplified photoresists. Efficiently using the available photons is of key importance. To increase photon absorption, sensitizer molecules, containing highly absorbing elements, can be added to photoresist formulations. These sensitizers have gained growing attention in recent years, showing significant sensitivity improvement. Aside from an increasing absorption, adding metal salts into the resist formulation can induce other mechanisms, like higher secondary electron generation or acid yield, or modification of the dissolution rate that also can affect patterning performance. In this work, we used different sensitizers in chemically amplified resists. We measured experimentally the absorption of EUV light, the acid yield, the photoelectron emission, the dissolution rate, and the patterning performance of the resists. Addition of a sensitizer raised the acid yield even though a decrease in film absorbance occurred, suggesting an apparent increase in chemically resonant secondary electrons. While patterning results confirm a significant sensitivity improvement, it was at the cost of roughness degradation at higher sensitizer loading. This is hypothesized by the chemical distribution of the sensitizer in the resist combined with a modification of the dissolution contrast, as observed by dissolution rate monitor measurements. [ABSTRACT FROM AUTHOR]

Background: The chemically amplified resist (CAR) has been the workhorse of lithography for the past few decades. During the evolution of projection lithography to extreme ultraviolet lithography (EUVL), a continuous reduction in feature size is observed. Also, a reduction in resist film thickness (FT) is required to prevent large aspect ratios that lead to pattern collapse. A further reduction in resist FT, into an ultrathin film regime (<30 nm resist FT), is expected when advancing to high NA EUVL. This brings along associated challenges with (1) resist critical dimension scanning electron microscope (CDSEM) metrology and (2) resist patterning performance. Aim: Assessment of metrology challenges and patterning limits of a CAR working in this ultrathin film regime. Deconvoluting the metrology and patterning effect on the determination of the unbiased line width roughness (uLWR). Approach: Patterning a CAR at different nominal resist FTs on two different underlayers to quantify the changes in CDSEM image quality and resist patterning performance with the resulting uLWR changes. Results: The CDSEM image signal-to-noise ratio (SNR) depends on resist FT and the underlayer. The uLWR increases with a reduction in resist FT but scales differently on the two underlayers. Conclusions: A relationship between CDSEM image SNR and uLWR is found. The SNR and uLWR scaling difference on the two underlayers, as well as the uLWR dependency on SNR was determined to be a metrology effect. The general uLWR increase for a reduced resist FT was determined to be a patterning effect. [ABSTRACT FROM AUTHOR]

Background: Polyphthalaldehyde (PPA)-based systems can be interesting candidates for extreme ultraviolet (EUV) lithography as dry development resists with simple chemistry. Aim: We present EUV-induced mechanistic and contrast curve studies for the end-capped PPA. Approach: Fourier transform infrared (FTIR) spectroscopy and desorption studies were conducted to understand the EUV-induced mechanistic pathway. Although, contrast curve analysis was used to check its feasibility for EUV-patterning. Results: First, FTIR and desorption studies confirmed that the EUV-radiation is capable to remove the end-capping group and induce unzipping (direct depolymerization) reaction in the PPA polymer chain. Second, contrast curve analysis showed a gradual decrease in the film thickness with respect to the EUV dose, which is due to the low EUV sensitivity of the PPA polymer. A post exposure bake step is important to improve the contrast curve, as it helps to depolymerize any residual polymer remaining after exposure. Further, even though the polymer sublimates when exposed to the EUV radiation, eliminating the need to apply a wet development step, crosslinking at high doses causes deposition of residual film onto the wafer surface. Therefore, a thin film (below 20 nm) and a wet development process might be important to get clean patterns. Conclusion: This study confirms that the end-capped PPA, with a simple patterning mechanism, can be a useful system for the development of new dry development resists for EUV lithography. [ABSTRACT FROM AUTHOR]

Background: The metal-oxide resist (MOR) is a promising type of nonchemically amplified resist (CAR) for EUV lithography. This family of resists shows some advantages over the conventional CARs. Even though a prior MOR model exists, no documented references for the application described could be found in open literature to develop a physically rational lithographic model that can accurately simulate and predict lithographic results for these resists. Aim: Increase the fundamental understanding of this class of resists by creating a model that also considers these aspects of the resist. Approach: Model the metal-oxo clusters of the MOR as nanoparticles with an effective radius that operate under excluded volume. Results: We show the possibility to include both the packing noise effect, as well as accurate roughness (characteristics) predictions by utilizing power spectral density (PSD) plots. Conclusions: Varying the calibrated model parameters has a clear effect on the overall roughness of the resist lines and is reflected in the PSD behavior. In contrast to experimental data, changing the resist film thickness did not result in a change in PSD behavior. [ABSTRACT FROM AUTHOR]