1. IP determination and 1+1 REMPI spectrum of SiO at 210–220 nm in an ion trap: Implications for SiO+ ion trap loading
- Author
-
Ivan Antonov, Brian Odom, and Patrick Stollenwerk
- Subjects
Range (particle radiation) ,010304 chemical physics ,Chemistry ,X band ,Analytical chemistry ,010402 general chemistry ,01 natural sciences ,Atomic and Molecular Physics, and Optics ,Molecular electronic transition ,0104 chemical sciences ,Optical pumping ,symbols.namesake ,0103 physical sciences ,Vibrational bands ,Rydberg formula ,symbols ,Ion trap ,Physical and Theoretical Chemistry ,Ionization energy ,Spectroscopy - Abstract
The 1+1 REMPI spectrum of SiO in the 210–220 nm range was recorded. Observed bands were mostly assigned to the vibrational bands v ″ = 0 - 3 , v ′ = 5 - 10 of the A - X electronic transition. Additionally, a band near 216–217 nm was tentatively assigned as a 2-photon transition from X to the n = 12 , 13 [ X 2 Σ + , v + = 1 ] Rydberg states. Based on observed lines we estimated the IP of SiO to be 11.594(5) eV. The SiO+ cation has previously been identified as having a cycling transition useful for state control by optical pumping. Our work allowed us to identify an efficient method for loading an ion trap with rotationally and vibrationally cold SiO+ from an ablated sample of SiO by photoionizing through the (5,0) A - X band at 213.977 nm.
- Published
- 2019