1. Electrical and Optical Characteristics of Two-Dimensional MoS2 Film Grown by Metal-Organic Chemical Vapor Deposition
- Author
-
Jae Suk Lee, Dae Hyun Jung, Tae-Wan Kim, Donghwan Kim, and Yonghee Jo
- Subjects
Electron mobility ,Materials science ,Biomedical Engineering ,Analytical chemistry ,Bioengineering ,02 engineering and technology ,General Chemistry ,Chemical vapor deposition ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,chemistry.chemical_compound ,symbols.namesake ,chemistry ,X-ray photoelectron spectroscopy ,symbols ,General Materials Science ,Metalorganic vapour phase epitaxy ,0210 nano-technology ,Raman spectroscopy ,Molybdenum disulfide ,Ohmic contact ,Layer (electronics) - Abstract
Atomically thin molybdenum disulfide (MoS2) films were synthesized on a SiO2/Si substrate by metal-organic chemical vapor deposition (MOCVD). Raman spectroscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy studies reveal the double-atomic-layer structure and the surface element composition of the MOCVD-grown MoS2 films. The photoluminescence measurement demonstrates a strong emission peak with a bandgap of 685.1 nm, attributed to highly efficient radiative transition at the double atomic layer. The contact resistance between the doubleatomic-layer MoS2 film and metal electrode was measured using the transmission-line modeling method. A Ti/Au electrode forms an ohmic contact with the double-atomic-layer MOCVD-grown MoS2 film, exhibiting a resistivity of 100 kΩ. The field-effect transistor based on the double-atomiclayer MoS2 film exhibits an electron mobility of 1.3×10−4 cm2/V·s and an on/off ratio of 6.5×102 at room temperature.
- Published
- 2020
- Full Text
- View/download PDF