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Abstract: This paper reports the effect of proton irradiation on the electrical properties of a-As2S3 in the temperature range of 323–418K and frequency range 0.1–100kHz. The variation of transport property is studied with proton irradiation dose (1×1013 ions/cm2 and 1×1015 ions/cm2). It has been observed that proton irradiation changes the dc conductivity (σ dc ), dc activation energy (ΔE dc ) and ac conductivity (σ ac (ω)). The σ dc and σ ac (ω) increases with dose of proton irradiation. The value of frequency exponent (s) decreases with the temperature and irradiation dose. These results are explained in terms of change in density of defect states in these glasses. [Copyright &y& Elsevier]

Abstract: Se–Te alloys are an important system of chalcogenide glasses from application point of view. The incorporation of Sn additive alters the electrical properties of these alloys. The conductivity measurements have been done on the thin films of a-Se85−x Te15Sn x (x =0, 2, 4, 6 and 10at.%) deposited using vacuum evaporation technique. Both dark (σ d) and photoconductivity (σ ph) show a maximum for x =6at.% of Sn, which, decreases on further Sn addition to the binary Se–Te alloy. The dark activation energy (ΔE d) shows a minimum for x =2at.% of Sn, but increases on further Sn addition. There is a sharp decrease in photosensitivity (σ ph/σ d) on Sn addition to Se85Te15 alloy. The charge carrier concentration (n σ ) calculated with the help of dc conductivity measurements also show a maximum at x =6at.% of Sn. The results are explained on the basis of increase in the density of localized states present in the mobility gap on Sn incorporation. [Copyright &y& Elsevier]

Abstract: This paper reports the effect of Ag-doping on electrical properties of a-Sb2Se3 in the temperature range 230–340K and frequency range 5–100kHz. The variation of transport properties with thermal doping has been studied. Ag-doping produces two homogeneous phases in the sample, which are found to be voltage dependent in the temperature range studied and frequency dependent in lower frequency region (0.1–10kHz). Activation energy E g and C′ [= σ 0 exp (γ/k), where γ, is the temperature coefficient of the band gap] calculated from dc conductivity has been found to vary from (0.42±0.01)eV to (0.26±0.01)eV and (4.11±0.01)×10−5 to (2.90±0.02)×10−6 Ω−1 cm−1 respectively. Ag-doping can be used to make the sample useful in device applications. [Copyright &y& Elsevier]