1. Simulation and optimization of GaAs1-xPx/Si1-yGey/Ge triple junction solar cells.
- Author
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Azzououm, A. B., Aissat, A., and Vilcot, J. P.
- Subjects
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SOLAR cells , *CELL junctions , *PHOTOVOLTAIC power systems , *STRAIN energy , *SILICON alloys , *GERMANIUM - Abstract
This paper focuses on studying and simulating a GaAs1-xPx/Si1-yGey/Ge triple-junction solar cell structure. First, the strain and the bandgap energy associated to the SiGe layer have been studied. The optimal germanium concentration is 0.88 with a strain around 0.45%. Then, the phosphor concentration effect on the strain and the bandgap energy of the upper layer GaAs1-xPx/Si0.12Ge0.88 has been optimized. At room temperature, the optimal output parameter reach Jsc=34.41mA/cm², Voc=1.27V, FF=88.42% and =38.45% for an absorber thickness of 4.5µm and x=0.47, with a strain that doesn't exceed 1.5%. This study has enabled us to design a high-efficiency, low cost 3J solar cell. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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