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Your search keyword '"Nitrides -- Atomic properties"' showing total 3 results
Start Over Descriptor "Nitrides -- Atomic properties" Journal journal of physical chemistry b
3 results on '"Nitrides -- Atomic properties"'

1. Surface chemistry in the atomic layer deposition of TiN films from TiCl4 and ammonia

Author

Tiznado, Hugo and Zaera, Francisco

Subjects
Ammonia -- Atomic properties, Ammonia -- Chemical properties, Titanium compounds -- Atomic properties, Titanium compounds -- Chemical properties, Nitrides -- Chemical properties, Nitrides -- Atomic properties, Chlorides -- Chemical properties, Chlorides -- Atomic properties, Dichloropropane -- Chemical properties, Dichloropropane -- Atomic properties, Chemicals, plastics and rubber industries
Abstract

X-ray photoelectron spectroscopy is used to characterize the surface chemistry of atomic layer depositions (ALD) of titanium nitride films using alternate doses of TiCl4 and NH3. In terms of the incorporation of contaminants in the grown films, it is found that chlorine is deposited in small quantities on the surface whereas oxygen is detected all throughout the grown films.

Published
2006

2. Excellent field emission properties of P-doped GaN nanowires

Author

B.D. Liu, Bando, Y., C.C. Tang, F.F. Xu, and Golberg, D.

Subjects
Gallium compounds -- Atomic properties, Nitrides -- Atomic properties, Phosphorus compounds -- Atomic properties, Semiconductor doping -- Methods, Chemicals, plastics and rubber industries
Abstract

The GaN nanowires, having average diameters of ~100 nanometer and lengths up to tens of micrometers and with P-doping were synthesized through a simple thermal evaporation process. The scanning electron microscope and high-resolution field-emission transmission electron microscope analyses revealed that P doping results in a rough surface morphology of GaN nonowires.

Published
2005

3. Direct observation of defect levels in InN by soft x-ray absorption spectroscopy

Author

Petravic, M., Deenapanray, P.N.K., Fraser, M.D., Soldatov, A.V., Y.-W. Yang, Anderson, P.A., and Durbin, S.M.

Subjects
Nitrogen -- Structure, Nitrogen -- Research, X-ray spectroscopy -- Usage, Nitrides -- Chemical properties, Nitrides -- Atomic properties, Chemicals, plastics and rubber industries
Abstract

Synchrotron-based near edge X-ray absorption fine structure (NEXAFS) spectroscopy was used to study the electronic of nitrogen-related defects in InN(0001). The NEXAFS revealed several defects created by ion-bombardment within the band gap or the conduction band around the nitrogen K-edge of InN and it also provided conclusive experimental evidence for the formation of interstitial nitrogen.

Published
2006

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