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We present a photoluminescence study of In(As,P) monolithic nanoinclusions into Si (100) substrates. The structures were grown in openings of the silicon substrates using an original approach based on the metal-organic vapor epitaxy method. The obtained arrays of In(As,P) nanoinclusions into the Si (100) surface were investigated by scanning microphotoluminescence spectroscopy. The obtained results show high crystalline quality of In(As,P) inclusions with broad emission peak in the near-infrared range of wavelengths.

We studied experimentally and numerically self-heating of a microdisk laser developed in the AlGaInAs material system and covered with dielectric layers. By experiments, we found that planarization of the microlaser with SU-8 photoresist significantly (almost, 2-fold) decreases the microlaser thermal resistance. Calculations demonstrate that a downward heat flux through the substrate to the heat sink is a dominant way of heat dissipation, and upward convection is much less relevant. Also, the calculations showed that covering microlaser with a TiO2 layer barely affects microdisk temperature but decreases heat localization in the structure.