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The beamline for angle-resolved photoemission spectroscopy (ARPES) with a nano-focused beam (nano-ARPES) is planned as one of the public beamlines in NanoTerasu, the 3-GeV next-generation synchrotron radiation facility at Tohoku, Japan, which is scheduled to start operation in 2024. A 4 m long APPLE-II type undulator provides brilliant soft X-rays with various polarizations (linear horizontal and vertical, and left and right circular) in the energy range of 50-1,000 eV. A collimated plane grating monochromator is adopted as a soft X-ray monochromator because we can select the demagnification factor of grating cf f = cosα/cosβ between the high energy-resolution (HR) mode for HR-ARPES experiments and the low divergence mode for high-flux nano-ARPES measurements. This beamline aims to produce the high flux nano-focused beam by using ultrahigh precision reflective mirror optics, not a Fresnel zone plate used as a focusing optics in the previous nano-ARPES station at other synchrotron facilities.

A synchrotron radiation beamline in the soft- and tender-X ray energy range of 180-3000 eV with versatile polarization control has been designed for NanoTerasu, the 3-GeV next-generation synchrotron radiation facility at Tohoku, Japan. A series of four APPLE-II type undulators is adopted as a photon source to realize the required beam properties with high-speed polarization switching. The beamline optics is designed for a highly efficient and precise use of x-ray magnetic circular/linear dichroism (XMCD/XMLD) technique balancing high photon flux and energy resolution. The simulated performance of the segmented undulator together with the monochromator optics achieved the sufficiently high flux and energy resolution (E/ΔE) in whole target energy range. Two endstations with the different re-focus optics, one for marginal spot size with high flux and the other for ultimate focus down to ∼10 nm are also designed. The simulated performance of the beamline encourages the future researches of high-throughput and nm-focused spintronic measurements.

The optical design of the ultrahigh-resolution RIXS beamline, which is currently developed at NanoTerasu in Japan, is described. The main goal of this beamline is to perform ultrahigh-resolution RIXS measurements with a total energy resolution of E/ΔE>150,000 for both beamline and RIXS spectrometer. To achieve the ultra-high resolution, a 2D-RIXS spectrometer using energy-dispersive X-ray is employed to compensate for lower throughput at higher energy resolution, and the optics of the beamline is optimized for the 2D-RIXS spectrometer. A vertically dispersing in-focus variable-included-angle varied-line-spacing plane grating monochromator is employed for the beamline, with an entrance slit to ensure the ultrahigh resolution. First and second mirrors focus X-ray on entrance slits vertically and horizontally, respectively, and the divergent X-ray is irradiated onto the grating. For the 2D-RIXS spectrometer, there is no exit slit, and the vertically energy-dispersed X-ray is irradiated directly onto a sample. In front of the sample, X-ray is horizontally refocused by a Wolter type-I mirror. The expected horizontal focus size at the sample is ~0.7 μm. The expected photon flux is ~1×1011 photons/s at 500–1000 eV with a virtual slit width of 2 μm required for E/ΔE>150,000. The height of the dispersed X-ray available in the 2D-RIXS spectrometer is ~120 μm, which allows the use of a remarkably high flux of ~6×1012 photons/s, and the beamline will serve as an ultrahigh-resolution and high-efficiency RIXS facility.

A ternary Fresnel zone plate (FZP) has been fabricated and installed at the beamline 11XU of SPring-8, in the aim of in situ studies on the growth of semiconductor nanostructures. The FZP is designed for an X-ray energy of 9.5 keV for the first-order diffraction, which is isolated by an order sorting aperture (OSA) inserted 450 mm after the FZP. The focal length of this FZP is 650 mm. The full width at half maximum of the focused beam profile was estimated to be 1.17 μm (H) × 1.38 μm (V) by the dark-field knife-edge scan. Using this FZP, micro-beam diffraction of an as-grown single InAs NW was carried out to show the feasibility of in situ study during growth.

The molecular beam epitaxial (MBE) growth and postgrowth annealing of InAs/GaAs(001) quantum dots were investigated by grazing-incidence X-ray diffraction using a diffractometer integrated with an MBE apparatus. The use of synchrotron radiation and a two-dimensional X-ray detector enabled X-ray diffraction measurements on the internal strains and height of dots at a rate of less than 10 s per frame. Mass transport by surface diffusion was found to play a major role in the nucleation of three-dimensional islands of InAs/GaAs(001).