1. An improvement in standard photolithography resolution based on Kirchhoff diffraction studies
- Author
-
Dominique Bosc, Michel Gadonna, Azar Maalouf, Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS), Région Bretagne, Conseil Général Côtes d'Armor, Lannion Trégor Agglomération, Communauté Européenne, Etat., Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)-Université de Rennes 1 (UR1), and Université de Rennes (UNIV-RENNES)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne
- Subjects
Diffraction ,Materials science ,Acoustics and Ultrasonics ,OCIS: 85.40.Hp ,42.70.Jk ,42.25.Fx ,42.79.Ci ,42.82.Et ,42.60.Da ,42.82.-m ,Thin layer ,02 engineering and technology ,Photoresist ,010402 general chemistry ,01 natural sciences ,law.invention ,Optics ,law ,Limit (mathematics) ,[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics] ,business.industry ,Resolution (electron density) ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,0104 chemical sciences ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic ,Photolithography ,0210 nano-technology ,business ,Realization (systems) - Abstract
Topic: Photonics and Semiconductor Device Physics; International audience; This paper demonstrates the realization of submicrometric patterns by using standard photolithography (365 nm). Significant improvements in standard photolithography resolution can be achieved with specific conditions of a very thin layer of photoresist (0.13 µm). Usually, standard photolithography has a resolution limit of about 1 µm. Firstly, using Kirchhoff diffraction theory we show that with these new conditions the theoretical resolution limit could be 0.4 µm. Secondly, in the experimental part, the realization of 0.8 µm size patterns is demonstrated.
- Published
- 2008