1. Selection by current compliance of negative and positive bipolar resistive switching behaviour in ZrO2−x/ZrO2bilayer memory
- Author
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Ruomeng Huang, Xingzhao Yan, Martin D. B. Charlton, C.H. de Groot, and Katrina Morgan
- Subjects
010302 applied physics ,Materials science ,Acoustics and Ultrasonics ,Condensed matter physics ,Polarity (physics) ,Bilayer ,chemistry.chemical_element ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Oxygen ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Protein filament ,chemistry ,0103 physical sciences ,Electroforming ,0210 nano-technology ,Layer (electronics) ,Dissolution ,Voltage - Abstract
We report here a ZrO2−x /ZrO2-based bilayer resistive switching memory with unique properties that enables the selection of the switching mode by applying different electroforming current compliances. Two opposite polarity modes, positive bipolar and negative bipolar, correspond to the switching in the ZrO2 and ZrO2−x layer, respectively. The ZrO2 layer is proved to be responsible for the negative bipolar mode which is also observed in a ZrO2 single layer device. The oxygen deficient ZrO2−x layer plays the dominant role in the positive bipolar mode, which is exclusive to the bilayer memory. A systematic investigation of the ZrO2−x composition in the bilayer memory suggests that ZrO1.8 layer demonstrates optimum switching performance with low switching voltage, narrow switching voltage distribution and good cycling endurance. An excess of oxygen vacancies, beyond this composition, leads to a deterioration of switching properties. The formation and dissolution of the oxygen vacancy filament model has been proposed to explain both polarity switching behaviours and the improved properties in the bilayer positive bipolar mode are attributed to the confined oxygen vacancy filament size within the ZrO2−x layer.
- Published
- 2017