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Intermixing induced in W/Si multilayers by irradiation with 150 MeV Ag+ ions has been studied. In situ x-ray reflectivity measurements during heavy ion irradiation allows one to monitor the evolution of interface mixing as well as internal stresses as a function of time during irradiation. The technique of x-ray reflectivity is sensitive enough to measure diffusion length down to 0.1 nm. A finite intermixing occurs in the system, in spite of it having a positive heat of mixing. High accuracy of the technique allows one to discern subtle effects of factors like stress or film thickness, on swift heavy ion irradiation induced intermixing. The measurements provide clear evidence of an enhanced intermixing in the presence of tensile stress in the film. Mixing efficiency decreases with increasing film thickness. The film thickness dependence of mixing efficiency can be understood in terms of the thermal spike model by taking into consideration the changes in electron mobility due to scattering from surface and interfaces.

Nitrogen incorporated tungsten oxide films are deposited on heated quartz substrates (973 K) for various nitrogen background pressures (namely, pN2 = 0.04, 0.08, 0.12, 0.17 and 0.20 mbar) by the pulsed laser deposition technique. The prepared films are characterized by using techniques such as x-ray diffraction (XRD), energy dispersive x-ray spectroscopy (EDX), atomic force microscopy (AFM), scanning electron microscopy, micro-Raman spectroscopy, UV–visible spectroscopy and temperature dependent dc electrical resistivity studies. XRD measurements revealed the presence of tungsten sub-oxide and WO3 phases depending on the nitrogen ambient pressure. Nitrogen incorporation in the films is confirmed through EDX analysis. Morphological features consisting of densely packed, void-free grains with a distinct grain boundary are portrayed through the AFM images of the films. The WO3 lattice distortion due to nitrogen incorporation is discussed using micro-Raman spectra of the films. Band gap narrowing, moderate transmittance in the visible range and the very low resistivity exhibited by the films prepared at pN2 = 0.12 mbar are imperative as far as solar cell applications are considered. A comparably higher visible transmittance with a band gap of 3.141 eV and a low resistivity obtained for the N : WO3 films prepared at a nitrogen ambient of 0.17 mbar is among the best reported for the coexistence of transparency in the visible range and conductivity in tungsten oxide films, which make them significant for micro-electronic applications.