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Fully transparent indium–tin-oxide/high-k-rare-earth-oxide Eu2O3/F-doped SnO2 devices that show stable bipolar resistance switching have been successfully fabricated. In addition to the transmittance of above 86% for visible light, high resistance ratio, good data retention and initial forming-free resistance switching behaviour were obtained in the transparent memory. The results of high-resolution spectroscopy and x-ray photoelectron spectroscopy analyses combining with the temperature dependence of resistance suggest that metallic Eu filaments are formed in the low-resistance state. Mechanism analysis indicates that the coexistence of oxygen vacancies and metallic Eu in the Eu2O3 films plays an important role in the forming-free resistive switching performance. The switching mechanism was attributed to formation/oxidation of filamentary and oxygen ion migration. [ABSTRACT FROM AUTHOR]

Ba1-xSrxTiO3 (BST) thin films with compositional bilayer structure are fabricated using rf magnetron sputtering by controlling the deposition conditions. A highly (100) preferred orientation is developed, and enhanced tunability is obtained with the introduction of the bilayer structure. The orientation of the films and the interface between the two layers are both responsible for the improvement in the performance. It is also demonstrated that the in situ annealing before the deposition of the upper layer plays an important role in determining the tunable properties. A long post-annealing could destroy the bilayer structure, and hence degrade the enhanced dielectric characteristics and tuning properties of the films. [ABSTRACT FROM AUTHOR]