1. Interface induced enhancement of inverse spin Hall voltage in NiFe/Pt bilayers capped by MgO layer
- Author
-
Tao Zhu, F F Chang, and X Z Zhan
- Subjects
Materials science ,Condensed matter physics ,Energy conversion efficiency ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Ferromagnetic resonance ,Metal ,Ferromagnetism ,Hall effect ,visual_art ,0103 physical sciences ,visual_art.visual_art_medium ,Spin Hall effect ,General Materials Science ,010306 general physics ,0210 nano-technology ,Spin (physics) ,Layer (electronics) - Abstract
In ferromagnet/heavy metal bilayers, a spin current can be generated under the ferromagnetic resonance (FMR) condition, and then converted into a charge current in adjacent nonmagnetic metals through inverse spin Hall effect (ISHE). Here, we report an experimental observation of interface induced ISHE enhancement in NiFe/Pt bilayers covered by MgO layer. Compared to bare NiFe/Pt bilayers, Pt/MgO interface induces an enhancement of the spin-charge conversion in the NiFe/Pt/MgO trilayers with very thin Pt layers, in agreement with the corresponding trend of Gilbert damping enhancement. When the thickness of Pt is below 1.6 nm, the ISHE induced charge current has about 70% enhancement. These results open a new pathway to improve the spin-charge conversion efficiency by interface engineering.
- Published
- 2019