Search

The dynamic evolution of ultrafast high-intensity pulses with a 100 fs half-width at 1/e intensity point based on the silicon-on-insulator (SOI) strip nanowaveguides is considered and investigated numerically under the condition of anomalous group-velocity dispersion (GVD) regime. For ultrafast high-intensity pulses propagating in millimeter-long SOI nanowaveguides, the interplay between the dispersion and nonlinear effects such as the two-photon absorption, free-carrier absorption, free-carrier dispersion, and self-phase modulation has to be taken into account, which results in the significant optical wave breaking phenomenon that occurs near the pulse leading edge for an unchirped Gaussian pulse in the anomalous GVD regime. However, when the input Gaussian pulse with linear up-chirp is introduced, the position of the optical wave breaking shifts from the leading pulse edge to its trailing edge along the several millimeters-long SOI nanowaveguides.

We present numerical investigations of ultrafast femtosecond (with time duration of 100 fs at 1/e intensity point) all-optical modulation of a pump-probe wave arrangement by using nondegenerate two-photon absorption (TPA), namely cross absorption, inside silicon-on-insulator (SOI) optical waveguides. Our results show that when a pump pulse with femtosecond duration and a continuous probe wave are co-propagating along the SOI, the probe wave can be modulated inversely by the ultrafast pump pulse, whose modulation depth depends strongly on the system parameters such as the waveguide length, the peak power and initial chirp of the pump wave, the group velocity dispersion (GVD), etc.; this means that the modulation depth can be improved by an appropriate increase of the waveguide length, the pump peak, and the initial chirp, in addition, which has a larger value for the probe wavelength in the normal dispersion regime compared with the case of abnormal dispersion when the center wavelength of the pump wave is located at the zero-dispersion wavelength.

To generate ultrafast femtosecond optical pulses, we propose a model of an integrated device consisting of a Mach-Zehnder interferometer (MZI) with two symmetric 3 dB directional couplers and a straight waveguide based on the single-mode silicon-on-insulator (SOI) optical waveguide. The principle of pulse generation in the presented device is based on the strong stimulated Raman scattering (SRS) in silicon; the center wavelength of the pulse generated is tunable by changing the center wavelength of the co-propagating pump pulse. Numerical results show that, when a continuous wave (CW) with a weak power at 1670 nm wavelength and a pump pulse with a high peak power at 1550 nm wavelength are co-propagating, a narrow femtosecond pulse with a pulse width (full width at half maximum, FWHM) of ∼60 fs (FWHM of the pump pulse is 166.5 fs) can be achieved in the device proposed. In addition, when the waveguide length, pump peak power, and pump-pulse width are fixed, the properties of generated femtosecond pulse depend strongly on the incident chirp of the pump pulse and the CW power.