1. Effects of V-pits covering layer position on the optoelectronic performance of InGaN green LEDs
- Author
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Junlin Liu, Xingan Jiang, Shuan Pan, Changda Zheng, Fengyi Jiang, Wu Xiaoming, and Chen Xu
- Subjects
010302 applied physics ,Materials science ,business.industry ,02 engineering and technology ,Radioluminescence ,Semiconductor device ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Electronic, Optical and Magnetic Materials ,law.invention ,law ,0103 physical sciences ,Materials Chemistry ,Optoelectronics ,Electric potential ,Electrical and Electronic Engineering ,0210 nano-technology ,business ,Luminescence ,Layer (electronics) ,Quantum well ,Light-emitting diode ,Diode - Abstract
The impact of the V-pits covering layer (VCL) position on the optoelectronic performance of InGaN-based green light-emitting diodes (LEDs) was investigated. It is found that earlier covering of V-pits will hinder the hole injection via the sidewall of V-pits, and then result in less quantum wells (QWs) participating in radioluminescence. The current-voltage characteristics show that the LEDs with earlier covering of V-pits have higher operating voltage at room temperature, and a more dramatic voltage rise with the reduction of temperature. Meanwhile, more manifested emission peaks for sidewall QWs and deeper QWs near to n-type layer was observed in the sample with earlier coveing of V-pits at cryogenic temperatures, for the reason that the holes being injected via V-pits sidewall have higher kinetic energy and could transport to deeper QWs.
- Published
- 2019
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